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1.发明公开公开(公告)号：US20230395365A1
公开(公告)日：2023-12-07
申请号：US18205370
申请日：2023-06-02
发明人： Gugrae Jo , Hyoungsik Kim , Woojin Cho , Jongsoon Lee , Hongjae Lee , Kyusang Kim , Seonjeong Kim , Heejeon Ma , Wonil Park , Kicheon Byun , Woojin Lee
CPC分类号： H01L21/02049 , H10K59/1201 , H01L27/1262 , B08B5/00 , B08B7/0071 , B08B7/04 , B08B13/00 , B08B7/0014
摘要： A method of manufacturing a display apparatus, the method includes removing an oxide layer formed on a surface of a substrate by utilizing a hydrofluoric acid gas and an ammonia gas, and thermally treating the substrate from which the oxide layer has been removed. A flow ratio between the hydrofluoric acid gas and the ammonia gas is about 0.8:1 to about 1:1.
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公开(公告)号：US20230354687A1
公开(公告)日：2023-11-02
申请号：US18308740
申请日：2023-04-28
发明人： Gugrae Jo , Hyoungsik Kim , Woojin Cho , Jongsoon Lee , Hongjae Lee , Kyusang Kim , Seonjeong Kim , Heejeon Ma , Wonil Park , Kicheon Byun , Woojin Lee
CPC分类号： H10K71/621 , H10K59/1201
摘要： A method of manufacturing a display apparatus includes forming a semiconductor layer on a substrate, forming an insulating layer on the semiconductor layer, forming a photoresist pattern on the insulating layer, forming, by etching the insulating layer, a contact hole exposing at least a portion of the semiconductor layer, and performing a primary cleaning of the insulating layer in which the contact hole is formed using a cleaning gas including a fluorine-containing gas and a hydrogencontaining gas.
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3.发明公开公开(公告)号：US20230167360A1
公开(公告)日：2023-06-01
申请号：US17994173
申请日：2022-11-25
发明人： Hyoungsik Kim , Jonghee Park , Sehoon Kim , Boyeon Lee , Yangryeong Kim , Seokil Jung , Ikjoon Kim , Sangseung Park , Wonho Noh , Mingyeong Jeong
摘要： An etchant composition is disclosed that provides selective etching of an indium oxide film or a sliver-containing metal layer. The etchant composition includes nitric acid, an organic acid, a sulfur compound, and a tin compound. The organic acid does not include the elements of sulfur and tin. The sulfur compound does not include the element of tin. The etchant composition may minimize the damage of a lower metal film and may exhibit excellent etching characteristics in terms of etching rate, bias, residue, precipitation, and etching uniformity.
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公开(公告)号：US11588141B2
公开(公告)日：2023-02-21
申请号：US17110138
申请日：2020-12-02
发明人： Dongkyun Seo , Hyoungsik Kim , Heekyun Shin , Junho Sim
摘要： In a method of manufacturing a display apparatus, the method includes: preparing a support substrate; forming a metal oxide layer on a surface of the support substrate, the metal oxide layer comprising first charges; forming a debonding layer on a surface of the metal oxide layer, the debonding layer comprising second charges opposite to the first charges; forming a flexible substrate on a surface of the debonding layer; forming a display element and a thin film encapsulation layer on a surface of the flexible substrate, the display element comprising a thin film transistor and an organic light-emitting diode; and isolating the flexible substrate from the support substrate.
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