公开(公告)号：US11329623B2

公开(公告)日：2022-05-10

申请号：US16934265

申请日：2020-07-21

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Won Han ,  Sang Uk Son ,  Hwa Sun Lee ,  Moon Chui Lee

IPC: H03H9/02 ,  H03H9/205 ,  H03H9/13 ,  H03H9/54

Abstract: A bulk-acoustic wave resonator includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer covering at least a portion of the first electrode, and a second electrode covering at least a portion of the piezoelectric layer. When an active region, in which the first electrode and the second electrode are disposed to overlap each other, is viewed from above, among four sides of a rectangle with which at least three vertices of a polygon formed by the active region are in contact, a longest side is defined as a side B and a side connected to side B is defined as a side A, and an aspect ratio (side B/side A) is 1.3 to 3.