公开(公告)号：US20130119423A1

公开(公告)日：2013-05-16

申请号：US13677072

申请日：2012-11-14

Applicant: Samsung Electronics Co., Ltd

Inventor： Wan Ho LEE ,  Gi Bum KIM ,  Si Hyuk LEE

IPC: H01L33/58

CPC classification number: H01L33/58 ,  H01L33/44 ,  H01L2224/14 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A semiconductor light emitting device and package containing the same include: a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A light extraction layer is disposed on the light emitting structure and includes a light-transmissive thin film layer having light transmittance, a nano-rod layer including nano-rods disposed on the light-transmissive thin film layer, and a nano-wire layer including nano-wires disposed on the nano-rod layer.

Abstract translation: 包含其的半导体发光器件和封装包括：包括第一导电型半导体层，有源层和第二导电类型半导体层的发光结构。 光提取层设置在发光结构上，并且包括具有透光性的透光薄膜层，包括设置在透光薄膜层上的纳米棒的纳米棒层和纳米线层，纳米线层包括 纳米线布置在纳米棒层上。