公开(公告)号：US20130248851A1

公开(公告)日：2013-09-26

申请号：US13779355

申请日：2013-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Baek SEON ,  Myung-kwan RYU ,  Kyung-Bae PARK ,  Sang-yoon LEE ,  Bon-Won KOO

IPC: H01L29/12

CPC classification number: H01L29/12 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/24975

Abstract: Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers.

Abstract translation: 氧化物薄膜，包括氧化物薄膜的电子器件和制造氧化物薄膜的方法，包括（A）应用包含锌（Zn），铟（In）和锡（Sn）中的至少一种的氧化物前体溶液的方法， （B）对氧化物前体溶液进行热处理以形成氧化物层，（C）重复步骤（A）和（B）以形成多个氧化物层。