公开(公告)号：US20190198622A1

公开(公告)日：2019-06-27

申请号：US16329679

申请日：2017-06-20

申请人： Sumitomo Electric Industries, Ltd.

发明人： Kosuke UCHIDA ,  Toru HIYOSHI ,  Mitsuhiko SAKAI

IPC分类号： H01L29/16 ,  H01L29/417 ,  H01L29/78 ,  H01L29/66

CPC分类号： H01L29/1608 ,  H01L29/12 ,  H01L29/417 ,  H01L29/41741 ,  H01L29/66068 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/78 ,  H01L29/7813

摘要： A first main surface is provided with: a gate trench defined by a first side surface and a first bottom surface; and a source trench defined by a second side surface and a second bottom surface. A silicon carbide substrate includes a drift region, a body region, a source region, a first region, and a second region. The first region is in contact with the second region. A gate insulating film is in contact with the drift region, the body region, and the source region at the first side surface, and is in contact with the drift region at the first bottom surface. A source electrode is in contact with the second region at the second side surface and the second bottom surface.

公开(公告)号：US20190157399A1

公开(公告)日：2019-05-23

申请号：US16308913

申请日：2017-06-02

申请人： National Institute of Advanced Industrial Science and Technology ,  Hitachi, LTD. ,  Fuji Electric Co., Ltd. ,  Mitsubishi Electric Corporation

发明人： Ryoji Kosugi ,  Shiyang Ji ,  Kazuhiro Mochizuki ,  Yasuyuki Kawda ,  Hidenori Kouketsu

IPC分类号： H01L29/16 ,  H01L29/78 ,  H01L29/06 ,  H01L29/04 ,  H01L21/308 ,  H01L21/02

CPC分类号： H01L29/1608 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02636 ,  H01L21/3083 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/12 ,  H01L29/78

摘要： A manufacturing yield and reliability of a semiconductor device including a power semiconductor element is improved. A plurality of trenches DT extending in an x direction and spaced apart from each other in a y direction orthogonal to the x direction are formed in a substrate having a main crystal surface tilted with respect to a direction. Also, a super-junction structure is constituted of a p-type column region PC made of a semiconductor layer embedded in the trench DT and an n-type column region NC made of a part of the substrate between the trenches DT adjacent in the y direction, and an angle error between the extending direction of the trench DT (x direction) and the direction is within ±θ. The θ is determined by {arctan {k× (w/h)}}/13 for the trench having a height of h and a width of w. Herein, the k is at least smaller than 2, preferably 0.9 or less, more preferably 0.5 or less, and still more preferably 0.3 or less.

公开(公告)号：US20190097004A1

公开(公告)日：2019-03-28

申请号：US16129554

申请日：2018-09-12

申请人： TOYODA GOSEI CO., LTD.

发明人： Tsutomu INA ,  Yukihisa UENO ,  Tohru OKA

IPC分类号： H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78 ,  H01L29/06 ,  H01L29/12

CPC分类号： H01L29/407 ,  H01L21/823437 ,  H01L29/06 ,  H01L29/0657 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/12 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/41766 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813

摘要： To provide a technique for alleviating electric field concentration at an end portion and the vicinity of the end portion of the bottom surface of a trench. In a non-active region, a semiconductor device comprises: an outer trench penetrating a third semiconductor layer and a second semiconductor layer to reach a first semiconductor layer, and surrounding an active region; a second insulating film covering the surface of the outer trench; a conductor formed in the outer trench covered by the second insulating film and electrically insulated from a control electrode and a contact electrode; and an outer electrode located outside the outer trench, contacting the second semiconductor layer, and being electrically connected to the contact electrode.

公开(公告)号：US20190058037A1

公开(公告)日：2019-02-21

申请号：US16081140

申请日：2016-12-21

申请人： Mitsubishi Electric Corporation

发明人： Atsufumi INOUE ,  Seiji OKA ,  Tsuyoshi KAWAKAMI ,  Akihiko FURUKAWA ,  Hidetada TOKIOKA ,  Mutsumi TSUDA ,  Yasushi FUJIOKA

IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L29/739 ,  H01L29/16 ,  H01L29/20 ,  H01L23/00

CPC分类号： H01L29/0696 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L24/26 ,  H01L29/12 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66325 ,  H01L29/739 ,  H01L29/7393 ,  H01L29/78 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/3511

摘要： A power semiconductor device includes an emitter electrode disposed on a semiconductor substrate and through which a main current flows, a conductive layer that is disposed on the emitter electrode and is not a sintered compact, and a sintered metal layer that is disposed on the conductive layer and is a sintered compact. The sintered metal layer has a size to cover all the emitter electrode in plan view, and has higher heat conductivity than the conductive layer. The power semiconductor device can improve heat dissipation performance and adhesion.

公开(公告)号：US20180162721A1

公开(公告)日：2018-06-14

申请号：US15379401

申请日：2016-12-14

申请人： Texas Instruments Incorporated

发明人： Simon Joshua Jacobs ,  Molly Nelis Sing

IPC分类号： B81B7/00 ,  B81C1/00

CPC分类号： B81B7/0038 ,  B29C65/48 ,  B81B7/02 ,  B81B2201/042 ,  B81C1/00214 ,  B81C1/00285 ,  B81C2201/11 ,  H01L21/56 ,  H01L21/67 ,  H01L23/10 ,  H01L23/20 ,  H01L29/12 ,  H01L29/84

摘要： In described examples, a MEMS device is enclosed within a sealed package including nonmetal oxide gasses at levels greater than 1% by volume. In at least one example, the MEMS device is protected against premature failure from various causes, including charging, particle growth and stiction by moieties of the nonmetal oxide gasses reacting with various exposed surfaces within the package of the MEMS device and/or the adsorbed water layers on said surfaces.

公开(公告)号：US20180158915A1

公开(公告)日：2018-06-07

申请号：US15844078

申请日：2017-12-15

申请人： ROHM CO., LTD.

发明人： Seigo MORI ,  Masatoshi AKETA

IPC分类号： H01L29/16 ,  H01L29/78 ,  H01L27/04 ,  H01L29/739 ,  H01L29/12 ,  H01L27/07

CPC分类号： H01L29/1608 ,  H01L21/8213 ,  H01L21/8232 ,  H01L27/04 ,  H01L27/0711 ,  H01L27/0716 ,  H01L29/12 ,  H01L29/66068 ,  H01L29/739 ,  H01L29/7393 ,  H01L29/78 ,  H01L29/7816 ,  H01L29/7825

摘要： A semiconductor device according to the present invention includes a semiconductor layer of SiC of a first conductivity type, a plurality of body regions of a second conductivity type formed in the surface portion of the semiconductor layer with each body region forming a unit cell, a source region of the first conductivity type formed in the inner portion of the body region, a gate electrode facing the body region across a gate insulating film, a drain region of the first conductivity type and a collector region of the second conductivity type formed in the rear surface portion of the semiconductor layer such that the drain region and the collector region adjoin each other, and a drift region between the body region and the drain region, wherein the collector region is formed such that the collector region covers a region including at least two unit cells in the x-axis direction along the surface of the semiconductor layer.

公开(公告)号：US20180138275A1

公开(公告)日：2018-05-17

申请号：US15870289

申请日：2018-01-12

申请人： Sumitomo Electric Industries, Ltd. ,  Renesas Electronics Corporation

发明人： Ryosuke Kubota ,  Shunsuke Yamada ,  Taku Horii ,  Takeyoshi Masuda ,  Daisuke Hamajima ,  So Tanaka ,  Shinji Kimura ,  Masayuki Kobayashi

IPC分类号： H01L29/16 ,  H01L29/51 ,  H01L21/66 ,  H01L21/321 ,  H01L21/324 ,  H01L21/326 ,  H01L29/45 ,  H01L29/12 ,  H01L29/78 ,  H01L29/49 ,  H01L29/423 ,  H01L21/28 ,  H01L29/66 ,  H01L21/04

CPC分类号： H01L29/1608 ,  G01R31/2621 ,  G01R31/2856 ,  H01L21/0485 ,  H01L21/049 ,  H01L21/28 ,  H01L21/321 ,  H01L21/324 ,  H01L21/326 ,  H01L22/14 ,  H01L29/12 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7827

摘要： A silicon carbide semiconductor device includes a silicon carbide substrate, a gate insulating film, and a gate electrode. The gate insulating film is provided as being in contact with the first main surface of the silicon carbide substrate. The gate electrode is provided on the gate insulating film such that the gate insulating film lies between the gate electrode and the silicon carbide substrate. In a first stress test in which a gate voltage of −5 V is applied to the gate electrode for 100 hours at a temperature of 175° C., an absolute value of a difference between a first threshold voltage and a second threshold voltage is not more than 0.5 V, with a threshold voltage before the first stress test being defined as the first threshold voltage and a threshold voltage after the first stress test being defined as the second threshold voltage.

公开(公告)号：US09972676B2

公开(公告)日：2018-05-15

申请号：US15109962

申请日：2014-12-12

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Rina Tanaka ,  Yasuhiro Kagawa ,  Naruhisa Miura ,  Yuji Ebiike

IPC分类号： H01L29/15 ,  H01L29/06 ,  H01L29/78 ,  H01L29/12 ,  H01L29/10 ,  H01L29/16 ,  H01L29/66

CPC分类号： H01L29/063 ,  H01L29/06 ,  H01L29/1095 ,  H01L29/12 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7813

摘要： A silicon carbide semiconductor device includes: a drift layer of a first conductivity type made of silicon carbide; a well region of a second conductivity type formed on the drift layer; a source region of a first conductivity type formed on the well region; a gate insulating film formed on an inner wall of a trench extending from a front surface of the source region through the well region, at least a part of a side surface of the gate insulating film being in contact with the drift layer; a gate electrode formed in the trench with the gate insulating film therebetween; a protective layer of the second conductivity type formed in the drift layer; and a depletion suppressing layer of the first conductivity type formed in the drift layer so as to be in contact with a side surface of the protective layer.

公开(公告)号：US20180122958A1

公开(公告)日：2018-05-03

申请号：US15846518

申请日：2017-12-19

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L29/66 ,  H01L27/12 ,  H01L29/12

CPC分类号： H01L29/7869 ,  H01L21/2636 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78696

摘要： It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

公开(公告)号：US09941366B2

公开(公告)日：2018-04-10

申请号：US15105278

申请日：2014-10-14

申请人： Atsushi Onogi ,  Shinichiro Miyahara

发明人： Atsushi Onogi ,  Shinichiro Miyahara

IPC分类号： H01L21/324 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/40 ,  H01L29/12 ,  H01L29/16 ,  H01L21/02

CPC分类号： H01L29/408 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/324 ,  H01L29/06 ,  H01L29/0623 ,  H01L29/12 ,  H01L29/1608 ,  H01L29/66734 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813

摘要： Described herein is a semiconductor device comprising: a semiconductor substrate; a trench provided at a surface of the semiconductor substrate; a first insulating layer covering an inner surface of the trench; and a second insulating layer located at a surface of the first insulating layer in the trench. A refraction index of the first insulating layer is larger than a refraction index of the second insulating layer.