公开(公告)号：US20140071769A1

公开(公告)日：2014-03-13

申请号：US14082304

申请日：2013-11-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungwon LEE ,  Byeonghoon LEE

IPC: G11C16/26

CPC classification number: G11C16/26

Abstract: Provided are a flash memory device and a method of verifying the same. The flash memory device includes: a memory cell for storing data; a sense amplifier for reading information of the memory cell; a load current input device for providing a load current to the sense amplifier; and a control circuit for controlling the load current input device to provide a load current during a memory cell reading operation, verifying the memory cell by using a program verify voltage if the memory cell is a programmed memory cell, and verifying the memory cell by using a compensated erase verify voltage if the memory cell is an erased memory cell.

Abstract translation: 提供一种闪存器件及其验证方法。 闪存装置包括：用于存储数据的存储单元; 用于读取存储器单元的信息的读出放大器; 用于向感测放大器提供负载电流的负载电流输入装置; 以及用于控制负载电流输入装置以在存储单元读取操作期间提供负载电流的控制电路，如果存储器单元是编程存储器单元，则通过使用程序验证电压来验证存储单元，以及通过使用 如果存储器单元是擦除的存储器单元，则补偿擦除验证电压。