公开(公告)号：US11302698B2

公开(公告)日：2022-04-12

申请号：US16829025

申请日：2020-03-25

申请人： Samsung Electronics Co., Ltd.

发明人： Yoonyoung Choi ,  Sungsoo Yim ,  Byeongmoo Kang ,  Seongmo Koo ,  Sejin Park ,  Jinwoo Bae

IPC分类号： H01L27/108 ,  H01L49/02

摘要： A semiconductor device includes a transistor on a semiconductor substrate including a first area and a second area, and having a gate structure and an impurity area, a first interlayer insulating film covering the transistor, and having a contact plug electrically connected to the impurity area, a capacitor including a lower electrode on the first interlayer insulating film in the second area and electrically connected to the contact plug, a dielectric film coating a surface of the lower electrode, and an upper electrode on the dielectric film, and a support layer in contact with an upper side surface of the lower electrode to support the lower electrode, and extending to the first area, in which the support layer has a step between the first area and the second area.