公开(公告)号：US12045163B2

公开(公告)日：2024-07-23

申请号：US18144335

申请日：2023-05-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyung-Kyun Byun ,  Byung June Song ,  Song Ho Yoon

IPC: G06F12/02 ,  G06F3/06 ,  G06F12/1009 ,  G06F16/28

CPC classification number: G06F12/0253 ,  G06F3/0608 ,  G06F3/0652 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/1009 ,  G06F16/285 ,  G06F2212/1044 ,  G06F2212/657

Abstract: A storage device includes: a buffer to receive first data and second data from outside, and store the first data and the second data on a first page; a non-volatile memory to store the first data and the second data in a first block; and a controller to perform a program operation that programs the first and second data in free blocks different from each other through a garbage collection. The first data may include a first stream class number identifying characteristics of the first data, and the second data may include a second stream class number identifying characteristics of the second data and is different from the first stream class number. The controller may transmit information of the program operation to the outside before performing the program operation. The controller may perform the program operation when receiving a program execution permission command from the outside.

公开(公告)号：US11941249B2

公开(公告)日：2024-03-26

申请号：US17358793

申请日：2021-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Woo Kim ,  Jae Sun No ,  Byung June Song ,  Kyoung Back Lee ,  Wook Han Jeong

IPC: G06F3/06

CPC classification number: G06F3/0611 ,  G06F3/0659 ,  G06F3/0679

Abstract: A memory device, a host device and a memory system are provided. The memory device may include a plurality of storage units configured to store data, and at least one device controller configured to, receive a read command from at least one host device and to read data stored in the plurality of storage units in response to the read command, the at least one host device including at least one host memory including a plurality of HPB (high performance boosting) entry storage regions, and provide the at least one host device with a response command, the response command indicating an activation or deactivation of the plurality of HPB entry storage regions, the response command including HPB entry type information which indicates a HPB entry type of the HPB entry storage region.

公开(公告)号：US11573733B2

公开(公告)日：2023-02-07

申请号：US16414129

申请日：2019-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung June Song ,  Song Ho Yoon

IPC: G06F3/06 ,  G06F21/60

Abstract: A data storage device including a first non-volatile memory configured to store data, and a device controller configured to control the first non-volatile memory may be provided, and wherein the device controller may be configured to receive a data read command including a first logical address of the first non-volatile memory, a first physical address corresponding to the first logical address, and first status information of the first non-volatile memory corresponding to the first physical address, determine a first read level, using the first status information included in the data read command, and apply a voltage of the first read level to a first word line of the first non-volatile memory corresponding to the first physical address to read data.