公开(公告)号：US10852644B2

公开(公告)日：2020-12-01

申请号：US16385203

申请日：2019-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung-je Jung ,  No-young Chung

IPC: G03F7/20 ,  G06F30/30

Abstract: An optical proximity correction (OPC) method may include providing a design layout including conductive patterns, determining line end void (LEV)-risk patterns among the conductive patterns, the LEV-risk patterns each having a risk of suffering from poor contact due to an LEV, setting markers including portions of the LEV-risk patterns and portions of the conductive patterns adjacent to the LEV-risk patterns, performing a first OPC on first patterns included in the markers and performing a second OPC on second patterns outside the markers, the second OPC being different from the first OPC, and each of the first OPC and the second OPC being performed a plurality of times, and calculating a cost function of each of the markers. The determining may include comparing risks of occurrence of poor contact in each of the conductive patterns based on a scoring function, and the scoring function may be inversely proportional to a width of each of the conductive patterns.