公开(公告)号：US20200064728A1

公开(公告)日：2020-02-27

申请号：US16382351

申请日：2019-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Akio Misaka ,  No-young Chung ,  Ki-soo KIM

IPC: G03F1/36 ,  G06F17/50 ,  G03F1/22 ,  G03F7/20

Abstract: A method of manufacturing a semiconductor device includes performing extreme ultraviolet (EUV) lithography that uses a mask for the EUV lithography manufactured by using a design layout on which optical proximity correction (OPC) is performed, and performing the OPC includes dividing respective patterns included in the design layout into partial patterns, classifying the partial patterns into a plurality of partial pattern groups, performing a first OPC on the design layout, and performing a second OPC that is different from the first OPC on the design layout on which the first OPC is performed, wherein performing the first OPC is performed on representative patterns selected from the plurality of partial pattern groups.

公开(公告)号：US10852644B2

公开(公告)日：2020-12-01

申请号：US16385203

申请日：2019-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung-je Jung ,  No-young Chung

IPC: G03F7/20 ,  G06F30/30

Abstract: An optical proximity correction (OPC) method may include providing a design layout including conductive patterns, determining line end void (LEV)-risk patterns among the conductive patterns, the LEV-risk patterns each having a risk of suffering from poor contact due to an LEV, setting markers including portions of the LEV-risk patterns and portions of the conductive patterns adjacent to the LEV-risk patterns, performing a first OPC on first patterns included in the markers and performing a second OPC on second patterns outside the markers, the second OPC being different from the first OPC, and each of the first OPC and the second OPC being performed a plurality of times, and calculating a cost function of each of the markers. The determining may include comparing risks of occurrence of poor contact in each of the conductive patterns based on a scoring function, and the scoring function may be inversely proportional to a width of each of the conductive patterns.

公开(公告)号：US11054736B2

公开(公告)日：2021-07-06

申请号：US16001213

申请日：2018-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woon-hyuk Choi ,  No-young Chung

IPC: G03F1/36 ,  G03F7/20 ,  G03F1/70 ,  G03F1/22 ,  G03F1/24

Abstract: A method of manufacturing an extreme ultraviolet (EUV) mask, for use in an EUV exposure process, on a mask substrate includes constructing a first monitoring macro considering an effect caused by a slit used in the EUV exposure process, performing an optical proximity correction (OPC) using a plurality of second monitoring macros, wherein each of the plurality of second monitoring macros is substantially identical to the first monitoring macro, inputting mask tape-out (MTO) design data acquired through the OPC, preparing mask data including at least one of data format conversion, mask process correction (MPC), and job-deck for the MTO design data, and performing EUV exposure (writing) on the mask substrate based on the mask data.

公开(公告)号：US10962874B2

公开(公告)日：2021-03-30

申请号：US16382351

申请日：2019-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Akio Misaka ,  No-young Chung ,  Ki-soo Kim

IPC: G03F1/36 ,  G03F7/20

Abstract: A method of manufacturing a semiconductor device includes performing extreme ultraviolet (EUV) lithography that uses a mask for the EUV lithography manufactured by using a design layout on which optical proximity correction (OPC) is performed, and performing the OPC includes dividing respective patterns included in the design layout into partial patterns, classifying the partial patterns into a plurality of partial pattern groups, performing a first OPC on the design layout, and performing a second OPC that is different from the first OPC on the design layout on which the first OPC is performed, wherein performing the first OPC is performed on representative patterns selected from the plurality of partial pattern groups.

公开(公告)号：US10908498B2

公开(公告)日：2021-02-02

申请号：US15869457

申请日：2018-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki-soo Kim ,  No-young Chung

IPC: G03F1/84 ,  G03F7/20 ,  G03F1/70 ,  G03F1/36

Abstract: An optical proximity correction (OPC) method includes preparing basic data for OPC, measuring with a scanning electron microscope (SEM) an after development inspection (ADI) critical dimension (CD) of a photoresist (PR) pattern with respect to a sample, measuring with the SEM an after cleaning inspection (ACI) CD of a wafer pattern formed using the PR pattern, generating CD data of the sample reflecting PR shrinking caused by the SEM measurement by using the measured ADI CD of the PR pattern and the measured ACI CD of the wafer pattern; and generating an OPC model based on the basic data and the CD data of the sample.