IMAGE SENSOR WITH STACK STRUCTURE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20240258347A1

    公开(公告)日:2024-08-01

    申请号:US18524723

    申请日:2023-11-30

    CPC classification number: H01L27/14623 H01L27/14645 H01L27/14621

    Abstract: An image sensor may include a first semiconductor chip including a pixel area and a peripheral area, the pixel area including a plurality of pixels, and a second semiconductor chip coupled to a lower surface of the first semiconductor chip, the second semiconductor chip including a plurality of logic elements, the pixel area including a plurality of color filters and a fence in the pixel area, the plurality of color filters corresponding to the plurality of pixels, the fence having a grid pattern, and each of the color filters of the plurality of color filters separated from each other by the fence, the peripheral area including a shield area and a shield outer area, the shield area surrounding the pixel area, and a fence insulating layer included in the shield outer area, the fence insulating layer including a same material as the fence.

    IMAGE SENSOR
    2.
    发明申请

    公开(公告)号:US20210168336A1

    公开(公告)日:2021-06-03

    申请号:US17170008

    申请日:2021-02-08

    Abstract: An image sensor is disclosed. The image sensor includes a substrate including an active region and a dummy region, a plurality of unit pixels on the active region, a transparent conductive layer on a first surface of the substrate, a light-blocking layer on the transparent conductive layer and electrically connected to the transparent conductive layer, the light-blocking layer having a grid structure adjacent light transmission regions, and a pad electrically connected to the light-blocking layer, on the dummy region.

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