公开(公告)号：US20160179430A1

公开(公告)日：2016-06-23

申请号：US14965521

申请日：2015-12-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHUN-UM KONG ,  KYU-HYUNG KIM ,  YOUNWON PARK

IPC: G06F3/06

CPC classification number: G06F3/0631 ,  G06F3/0604 ,  G06F3/0616 ,  G06F3/064 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2212/1032 ,  G06F2212/7201 ,  G06F2212/7211

Abstract: A storage device includes a nonvolatile memory device including memory blocks divided into a first memory area and a second memory area; and a memory controller. In the case of programming specific attribute data, the memory controller determines a memory area in which the specific attribute data will be programmed according to a wear out ratio of the first memory area and a wear out ratio of the second memory area. The wear out ratio is a ratio of the current maximum erase count of memory blocks of a memory area with respect to the allowable maximum erase count of the memory area.

Abstract translation: 一种存储装置，包括：非易失性存储装置，包括分成第一存储区和第二存储区的存储块; 和一个内存控制器。 在对特定属性数据进行编程的情况下，存储器控制器根据第一存储区域的磨损比和第二存储区域的磨损比确定特定属性数据将被编程的存储区域。 磨损比是存储区域的存储块的当前最大擦除次数相对于存储区域的容许最大擦除次数的比率。

公开(公告)号：US20140115239A1

公开(公告)日：2014-04-24

申请号：US14056476

申请日：2013-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHUN-UM KONG ,  Su-Ryun Lee ,  Youn-Won Park ,  Hong-Suk Choi

IPC: G06F12/02

CPC classification number: G06F12/0246

Abstract: A method of managing data in a nonvolatile memory device. The method includes providing a nonvolatile memory device having a hot region and a cold region. The hot region includes first through n-th blocks. Input pages having metadata are received from a host. The input pages are sequentially written to the first through n-th blocks. Valid pages are identified from the input pages written to the first block after the n-th block is written. The valid pages are written to the cold region.

Abstract translation: 一种在非易失性存储器件中管理数据的方法。 该方法包括提供具有热区域和冷区域的非易失性存储器件。 热区域包括第一到第n个块。 从主机接收具有元数据的输入页面。 输入页被顺序地写入到第一到第n个块。 在写入第n个块之后，从写入第一个块的输入页面识别有效页面。 有效页面写入寒冷地区。