公开(公告)号：US20160035774A1

公开(公告)日：2016-02-04

申请号：US14813182

申请日：2015-07-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： HyunPil Noh ,  Dong-Chul LEE ,  Seokha LEE ,  Chan PARK ,  Seungho SHIN

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14689

Abstract: An image sensor includes a photoelectric conversion element in a substrate, a first storage region spaced apart from the photoelectric conversion element in the substrate, a gate on the first storage region, a light shielding layer covering the gate, a dielectric layer disposed between the gate and the light shielding layer and extending onto a top surface of the substrate, an interlayer insulating structure covering the light shielding layer, and a micro-lens overlapping with the photoelectric conversion element on the interlayer insulating structure. The light shielding layer includes a first portion covering a sidewall of the gate, and a second portion on a top surface of the gate. The first portion has a first thickness corresponding to a vertical height from a bottom surface of the first portion to a top surface of the first portion, and the first thickness is greater than a second thickness of the second portion.

Abstract translation: 图像传感器包括基板中的光电转换元件，与基板中的光电转换元件间隔开的第一存储区域，第一存储区域上的栅极，覆盖栅极的遮光层，设置在栅极之间的介电层 并且遮光层延伸到基板的顶表面，覆盖遮光层的层间绝缘结构和与层间绝缘结构上的光电转换元件重叠的微透镜。 遮光层包括覆盖栅极侧壁的第一部分和栅极顶表面上的第二部分。 第一部分具有对应于从第一部分的底表面到第一部分的顶表面的垂直高度的第一厚度，并且第一厚度大于第二部分的第二厚度。