公开(公告)号：US10804304B2

公开(公告)日：2020-10-13

申请号：US16114453

申请日：2018-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-pil Noh ,  Chang-keun Lee ,  Je-won Yu ,  Kang-sun Lee

IPC: H01L27/146

Abstract: Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region and an optical black region. The image sensor includes a plurality of photoelectric conversion regions in the pixel region. The image sensor includes a wiring structure on a first surface of the semiconductor substrate. The image sensor includes a light shielding layer on a second surface of the semiconductor substrate in the optical black region. Moreover, the image sensor includes a light shielding wall structure that is in the semiconductor substrate between the pixel region and the optical black region and that is connected to the light shielding layer.

公开(公告)号：US20190221597A1

公开(公告)日：2019-07-18

申请号：US16114453

申请日：2018-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-pil Noh ,  Chang-keun Lee ,  Je-won Yu ,  Kang-sun Lee

IPC: H01L27/146

Abstract: Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region and an optical black region. The image sensor includes a plurality of photoelectric conversion regions in the pixel region. The image sensor includes a wiring structure on a first surface of the semiconductor substrate. The image sensor includes a light shielding layer on a second surface of the semiconductor substrate in the optical black region. Moreover, the image sensor includes a light shielding wall structure that is in the semiconductor substrate between the pixel region and the optical black region and that is connected to the light shielding layer.