公开(公告)号：US10804304B2

公开(公告)日：2020-10-13

申请号：US16114453

申请日：2018-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-pil Noh ,  Chang-keun Lee ,  Je-won Yu ,  Kang-sun Lee

IPC: H01L27/146

Abstract: Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region and an optical black region. The image sensor includes a plurality of photoelectric conversion regions in the pixel region. The image sensor includes a wiring structure on a first surface of the semiconductor substrate. The image sensor includes a light shielding layer on a second surface of the semiconductor substrate in the optical black region. Moreover, the image sensor includes a light shielding wall structure that is in the semiconductor substrate between the pixel region and the optical black region and that is connected to the light shielding layer.

公开(公告)号：US09521341B2

公开(公告)日：2016-12-13

申请号：US14574463

申请日：2014-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-sub Shim ,  Seung-sik Kim ,  Kang-sun Lee ,  Moo-sup Lim

IPC: H04N5/369 ,  H04N9/04 ,  H04N5/374 ,  H01L27/146

CPC classification number: H04N5/374 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/2254 ,  H04N5/3696 ,  H04N9/045 ,  H04N9/077

Abstract: Provided are an image sensor and an image capturing apparatus including the image sensor. The image sensor includes a pixel array including: multiple sensing pixels outputting image signals respectively corresponding to intensities of incident light; and at least one pair of focusing pixels that are adjacent each other, and each outputting a phase difference of the incident light as a focusing signal; wherein each focusing pixel includes: a semiconductor layer including a photodetecting device accumulating electric charges generated according to absorbed light from among the incident light; a wiring layer formed on a first surface of the semiconductor layer and including wirings; a planarization layer having a first surface on a second surface of the semiconductor layer; a shielding layer formed in the planarization layer to block some of the incident light to be incident to the photodetecting device; and a color filter layer and a micro lens layer.

Abstract translation: 提供了包括图像传感器的图像传感器和图像捕获装置。 图像传感器包括：像素阵列，包括：多个感测像素，分别输出对应于入射光强度的图像信号; 以及彼此相邻的至少一对聚焦像素，并且各自输出入射光的相位差作为聚焦信号; 其中每个聚焦像素包括：半导体层，包括累积根据入射光中吸收的光产生的电荷的光电检测装置; 布线层，其形成在所述半导体层的第一表面上并且包括布线; 平坦化层，其具有在所述半导体层的第二表面上的第一表面; 形成在所述平坦化层中的屏蔽层，以阻挡入射到所述光电检测器件的入射光的一部分; 以及滤色器层和微透镜层。

公开(公告)号：US20190221597A1

公开(公告)日：2019-07-18

申请号：US16114453

申请日：2018-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-pil Noh ,  Chang-keun Lee ,  Je-won Yu ,  Kang-sun Lee

IPC: H01L27/146

Abstract: Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region and an optical black region. The image sensor includes a plurality of photoelectric conversion regions in the pixel region. The image sensor includes a wiring structure on a first surface of the semiconductor substrate. The image sensor includes a light shielding layer on a second surface of the semiconductor substrate in the optical black region. Moreover, the image sensor includes a light shielding wall structure that is in the semiconductor substrate between the pixel region and the optical black region and that is connected to the light shielding layer.

公开(公告)号：US10070085B2

公开(公告)日：2018-09-04

申请号：US15343311

申请日：2016-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-sub Shim ,  Seung-sik Kim ,  Kang-sun Lee ,  Moo-sup Lim

IPC: H04N5/374 ,  H04N5/369 ,  H04N9/04 ,  H01L27/146 ,  H04N5/225 ,  H04N9/077

Abstract: Provided are an image sensor and an image capturing apparatus including the image sensor. The image sensor includes a pixel array including: multiple sensing pixels outputting image signals respectively corresponding to intensities of incident light; and at least one pair of focusing pixels that are adjacent each other, and each outputting a phase difference of the incident light as a focusing signal; wherein each focusing pixel includes: a semiconductor layer including a photodetecting device accumulating electric charges generated according to absorbed light from among the incident light; a wiring layer formed on a first surface of the semiconductor layer and including wirings; a planarization layer having a first surface on a second surface of the semiconductor layer; a shielding layer formed in the planarization layer to block some of the incident light to be incident to the photodetecting device; and a color filter layer and a micro lens layer.