公开(公告)号：US20240015948A1

公开(公告)日：2024-01-11

申请号：US18333084

申请日：2023-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho JUNG ,  Jongyeong MIN ,  Jiye BAEK ,  Yeseul LEE ,  Jinwook LEE ,  Changhwa JUNG

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/0335 ,  H10B12/34

Abstract: A method of manufacturing an integrated circuit device may include forming a plurality of lower electrodes above a substrate, forming a supporter configured to support the plurality of lower electrodes, forming a dielectric film on the plurality of lower electrodes and the supporter, and forming an upper electrode on the dielectric film. The dielectric film may include a lower leakage current prevention layer on an outer surface of each of the plurality of lower electrodes and an outer surface of the supporter, a first capacitor material layer on the lower leakage current prevention layer, an upper material layer on the first capacitor material layer, and a second capacitor material layer on the upper material layer.