公开(公告)号：US20240187002A1

公开(公告)日：2024-06-06

申请号：US18350606

申请日：2023-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwook LEE ,  Joohwan KIM ,  Junyoung PARK ,  Jindo BYUN ,  Eunseok SHIN ,  Junghwan CHOI

IPC: H03L7/081 ,  G11C7/22 ,  H03K5/135

CPC classification number: H03L7/0812 ,  G11C7/222 ,  H03K5/135

Abstract: A semiconductor device includes a phase splitter configured to output a plurality of clock signals having different phases by using a plurality of external clock signals having different phases, a plurality of code generators configured to receive a pair of selection clock signals determined from the plurality of clock signals and to output a phase code corresponding to a phase difference error between the pair of selection clock signals, and a delay circuit configured to at least partly simultaneously adjust at least two of a rising edge and a falling edge of each of the plurality of external clock signals with reference to the phase code during a lock time.

公开(公告)号：US20240004762A1

公开(公告)日：2024-01-04

申请号：US18196258

申请日：2023-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwook LEE ,  Sooyoung Ji

IPC: G06F11/14 ,  G06F11/07

CPC classification number: G06F11/1464 ,  G06F11/1469 ,  G06F11/0772

Abstract: A method of recovering data in a storage device is provided. The method includes: receiving backup storage information associated with a backup storage device from a host device, both the host device and the backup storage device being external to the storage device, and the backup storage device being configured to store backup data corresponding to first data; performing a data read operation on the first data; based on an unrecoverable data failure occurring while reading the first data, directly receiving the backup data corresponding to the first data from the backup storage device based on the backup storage information; and performing a data recovery operation for the first data based on the backup data.

公开(公告)号：US20220189870A1

公开(公告)日：2022-06-16

申请号：US17373900

申请日：2021-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongsik SHIN ,  Dong Kwon KIM ,  Jinwook LEE ,  Jongchul PARK ,  Wonhyuk LEE

IPC: H01L23/522 ,  H01L29/66 ,  H01L21/768

Abstract: A semiconductor device including a gate pattern on a substrate and including a gate dielectric layer, a gate electrode, and a gate capping pattern that are sequentially stacked; a gate spacer on a sidewall of the gate pattern; a source/drain pattern in the substrate; a contact pad on the source/drain pattern, a source/drain contact on the contact pad; and a buried dielectric pattern between the gate spacer and the source/drain contact, wherein the gate spacer includes a first segment between the gate electrode and the source/drain pattern; a second segment that extends from the first segment and between the gate electrode and the source/drain contact; and a third segment on the second segment, the buried dielectric pattern is between the third segment and the source/drain contact, and is absent between the first segment and the contact pad and is absent between the second segment and the source/drain contact.

公开(公告)号：US20230205427A1

公开(公告)日：2023-06-29

申请号：US17982951

申请日：2022-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwook LEE ,  Heeseok EUN

IPC: G06F3/06

CPC classification number: G06F3/0616 ,  G06F3/0673 ,  G06F3/0659

Abstract: Provided is an operating method of a storage device including a memory controller and a memory device, the operating method including storing a plurality of streams received from a host in the memory device; performing a management operation on a first storage region of the memory device in which a first stream from among the plurality of streams is stored; and performing a management operation on a second storage region of the memory device in which a second stream selected from among the plurality of streams based on an attribute of the first stream is stored.

公开(公告)号：US20240069814A1

公开(公告)日：2024-02-29

申请号：US18200215

申请日：2023-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwook LEE ,  Heeseok Eun

IPC: G06F3/06

CPC classification number: G06F3/067 ,  G06F3/0604 ,  G06F3/0655 ,  G06F3/0664

Abstract: A method of operating a storage server which includes a plurality of storage devices and a storage node configured to control the plurality of storage devices is provided. The method includes grouping first virtual machines based on workload characteristics of the first virtual machines, to generate a virtual machine group table; receiving, from first storage devices, attribute information of the first storage devices, the first storage devices being allocated to the first virtual machines; collecting recovery information from the first storage devices; generating a recovery sequence table by determining recovery sequences based on the virtual machine group table, the attribute information, and the recovery information; and providing a corresponding recovery sequence to a second storage device of the plurality of storage devices, based on the recovery sequence table, the second storage device being allocated to a new second virtual machine different from the first virtual machines.

公开(公告)号：US20240015949A1

公开(公告)日：2024-01-11

申请号：US18333213

申请日：2023-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho JUNG ,  Jongyeong MIN ,  Jiye BAEK ,  Yeseul LEE ,  Jinwook LEE ,  Wonsik CHOI

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/0335 ,  H10B12/34

Abstract: An integrated circuit device may include a plurality of lower electrodes above a substrate, a supporter between the plurality of lower electrodes, an upper electrode on the plurality of lower electrodes, and a capacitor dielectric film between the upper electrode and the plurality of lower electrodes. The supporter may include one of a metal oxide, a metal nitride, and a metal oxynitride. A portion of the capacitor dielectric film may include a dopant. The dopant in the portion of the capacitor dielectric film and a metal in the supporter may be a same metal.

公开(公告)号：US20230221875A1

公开(公告)日：2023-07-13

申请号：US17879967

申请日：2022-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongouk MOON ,  Sanghwa JIN ,  Jinwook LEE

IPC: G06F3/06

CPC classification number: G06F3/064 ,  G06F3/0679 ,  G06F3/0604

Abstract: In a method of operating a storage device including a nonvolatile memory device, an abnormal area may be detected as an optional area in the nonvolatile memory device, and optional data optional data may be stored in the optional area. The abnormal area may be a portion of the nonvolatile memory device having an access time exceeding a reference latency.

公开(公告)号：US20240295986A1

公开(公告)日：2024-09-05

申请号：US18238856

申请日：2023-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunjoon YOO ,  Heeseok EUN ,  Jinwook LEE ,  Seungcheol LEE

IPC: G06F3/06

CPC classification number: G06F3/0656 ,  G06F3/0604 ,  G06F3/0679

Abstract: A storage device includes: a plurality of non-volatile memory devices; a buffer configured to store user data and event data of a vehicle; a parity generating circuit configured to generate parity data; and a controller configured to: generate at least one user data segment corresponding to at least one first segment from a plurality of first segments based on the user data, generate, based on predetermined information generated in a state in which at least one user data segment is generated, at least one event data segment based on the event data corresponding to at least one first segment from the plurality of first segments that is different from the first segment corresponding to the user data segment, and store a stripe comprising the at least one user data segment, the at least one event data segment, and the parity data in the plurality of non-volatile memory devices.

公开(公告)号：US20240053791A1

公开(公告)日：2024-02-15

申请号：US18383747

申请日：2023-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sejin KIM ,  Jongwan JEONG ,  Wanju SIN ,  Jinwook LEE

IPC: G06F1/16 ,  G02B1/18 ,  G02B1/04 ,  G02B1/12 ,  G06F1/18

CPC classification number: G06F1/1607 ,  G02B1/18 ,  G02B1/04 ,  G02B1/12 ,  G06F1/181

Abstract: Disclosed is an electronic device which includes a housing having a protective layer formed thereon. The electronic device according to embodiments of the present invention may include a housing which covers at least a part of the outer surface. The housing includes a transparent substrate, a multilayer structure formed on the surface of the transparent substrate and including multiple layers which are stacked such that the respective adjacent layers have different refractive indexes and an aluminum oxide layer formed on the multilayer structure. The transparent substrate may include a glass material.

公开(公告)号：US20240015948A1

公开(公告)日：2024-01-11

申请号：US18333084

申请日：2023-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho JUNG ,  Jongyeong MIN ,  Jiye BAEK ,  Yeseul LEE ,  Jinwook LEE ,  Changhwa JUNG

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/0335 ,  H10B12/34

Abstract: A method of manufacturing an integrated circuit device may include forming a plurality of lower electrodes above a substrate, forming a supporter configured to support the plurality of lower electrodes, forming a dielectric film on the plurality of lower electrodes and the supporter, and forming an upper electrode on the dielectric film. The dielectric film may include a lower leakage current prevention layer on an outer surface of each of the plurality of lower electrodes and an outer surface of the supporter, a first capacitor material layer on the lower leakage current prevention layer, an upper material layer on the first capacitor material layer, and a second capacitor material layer on the upper material layer.