公开(公告)号：US20220359200A1

公开(公告)日：2022-11-10

申请号：US17532163

申请日：2021-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Kun KANG ,  Hyun Woo KIM ,  Cheol In JANG

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/308

Abstract: A method for fabricating a semiconductor device includes forming a first mask layer on a substrate, forming an under layer on the first mask layer, forming a first photoresist pattern that includes tin on the under layer, converting at least a part of the first photoresist pattern into a second photoresist pattern including tin fluoride, through a plasma treatment process using fluorine element, etching the under layer using the second photoresist pattern as a first mask to form an under pattern, etching the first mask layer to form a first mask pattern, and etching at least a part of the substrate, using a mask pattern including the first mask pattern as a second mask.