公开(公告)号：US10989520B2

公开(公告)日：2021-04-27

申请号：US16715258

申请日：2019-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Duck-mahn Oh ,  Jong-an Kim ,  Si-hyeon Choi ,  Young-hoon Sohn ,  Yu-sin Yang ,  Chi-hoon Lee

IPC: G01B11/06

Abstract: A method for nondestructive measurement of an underlying layer thickness includes irradiating, with a pump laser pulse, a sample to induce generation of an acoustic wave in the sample such that the acoustic wave propagates through the sample over time, where the sample includes a substrate, an underlying layer on the substrate, and an overlying layer on the underlying layer and the underlying layer is isolated from an exterior of the sample by at least the overlying layer, irradiating the sample with a probe laser pulse after irradiating the sample with the pump laser pulse, determining a reflectance variation of the sample over time, based on monitoring a variation of a reflection of the probe laser pulse from the sample over time, to generate a first graph showing a variation of reflectance of the sample over time, and determining a thickness of the underlying layer based on the first graph.

公开(公告)号：US11494642B2

公开(公告)日：2022-11-08

申请号：US16678755

申请日：2019-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Su-il Cho ,  Sung-yoon Ryu ,  Yu-sin Yang ,  Chi-hoon Lee ,  Hyun-su Kwak ,  Jung-won Kim

IPC: G06N3/08 ,  C23C16/52 ,  H01L27/115 ,  H01L21/66

Abstract: A thickness prediction network learning method includes measuring spectrums of optical characteristics of a plurality of semiconductor structures each including a substrate and first and second semiconductor material layers alternately stacked thereon to generate sets of spectrum measurement data, measuring thicknesses of the first and second semiconductor material layers to generate sets of thickness data, training a simulation network using the sets of spectrum measurement data and the sets of thickness data, generating sets of spectrum simulation data of spectrums of the optical characteristics of a plurality of virtual semiconductor structures based on thicknesses of first and second virtual semiconductor material layers using the simulation network, each of the first and second virtual semiconductor layers including the same material as the first and second semiconductor material layers, respectively; and training a thickness prediction network by using the sets of spectrum measurement data and the sets of spectrum simulation data.

公开(公告)号：US20200208964A1

公开(公告)日：2020-07-02

申请号：US16715258

申请日：2019-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Duck-mahn OH ,  Jong-an Kim ,  Si-hyeon Choi ,  Young-hoon Sohn ,  Yu-sin Yang ,  Chi-hoon Lee

IPC: G01B11/06

Abstract: A method for nondestructive measurement of an underlying layer thickness includes irradiating, with a pump laser pulse, a sample to induce generation of an acoustic wave in the sample such that the acoustic wave propagates through the sample over time, where the sample includes a substrate, an underlying layer on the substrate, and an overlying layer on the underlying layer and the underlying layer is isolated from an exterior of the sample by at least the overlying layer, irradiating the sample with a probe laser pulse after irradiating the sample with the pump laser pulse, determining a reflectance variation of the sample over time, based on monitoring a variation of a reflection of the probe laser pulse from the sample over time, to generate a first graph showing a variation of reflectance of the sample over time, and determining a thickness of the underlying layer based on the first graph.