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    Method of Inspecting Wafer Using Electron Beam
    1.
    发明申请
    Method of Inspecting Wafer Using Electron Beam 审中-公开
    使用电子束检查晶片的方法

    公开(公告)号：US20160293379A1

    公开(公告)日：2016-10-06

    申请号：US15084059

    申请日：2016-03-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Souk Kim ,  Chung-sam Jun ,  Woo-seok Ko ,  Sang-Kil Lee ,  Kwang-il Shin ,  Yu-sin Yang ,  Min-chul Yoon

    IPC: H01J37/22 ,  H01J37/20

    CPC classification number: H01J37/222 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/20214 ,  H01J2237/226 ,  H01J2237/2817

    Abstract: A method of inspecting a wafer may include: loading of a wafer onto a stage, the wafer having a plurality of dies thereon; positioning of the wafer such that a plurality of electron beam columns on the wafer respectively face a partial region of each of the plurality of dies on the wafer; scanning the respective partial regions of each of the plurality of dies by using the electron beam columns; and combining a plurality of partial images that are obtained by scanning the partial regions to provide a die image.

    Abstract translation: 检查晶片的方法可以包括：将晶片装载到台上，所述晶片在其上具有多个管芯; 晶片的定位使得晶片上的多个电子束列分别面对晶片上的多个管芯中的每一个的部分区域; 通过使用电子束柱扫描多个管芯中的每一个的各个部分区域; 以及组合通过扫描所述部分区域获得的多个部分图像以提供管芯图像。

    Method of inspecting wafer
    2.
    发明授权
    Method of inspecting wafer 有权
    检查晶圆的方法

    公开(公告)号：US09036895B2

    公开(公告)日：2015-05-19

    申请号：US13785307

    申请日：2013-03-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Young-hoon Sohn ,  Yu-sin Yang ,  Sang-kil Lee

    IPC: G06K9/00 ,  G06T7/00

    CPC classification number: G06T7/0004 ,  G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148

    Abstract: A method of inspecting a wafer includes performing a fabricating process on a wafer, irradiating broadband light on the wafer, such that the light is reflected from the wafer, generating a spectral cube by using the light reflected from the wafer, extracting a spectrum of a desired wafer inspection region from the spectral cube, and inspecting the desired wafer inspection region by analyzing the extracted spectrum.

    Abstract translation: 一种检查晶片的方法包括在晶片上执行制造工艺，在晶片上照射宽带光，使得光从晶片反射，通过使用从晶片反射的光产生光谱立方体， 来自光谱立方体的期望晶片检查区域，并且通过分析所提取的光谱来检查期望的晶片检查区域。

    Method of inspecting surface and method of manufacturing semiconductor device
    4.
    发明授权
    Method of inspecting surface and method of manufacturing semiconductor device 有权

    公开(公告)号：US10249544B2

    公开(公告)日：2019-04-02

    申请号：US15654899

    申请日：2017-07-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung-yoon Ryu ,  Chung-sam Jun ,  Yu-sin Yang ,  Yun-jung Jee ,  Gil-woo Song

    IPC: H01L21/00 ,  H01L21/66 ,  G06K9/00 ,  G06K9/46 ,  H01L21/77 ,  G06K9/20

    Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

    Methods for nondestructive measurements of thickness of underlying layers
    5.
    发明授权
    Methods for nondestructive measurements of thickness of underlying layers 有权

    公开(公告)号：US10989520B2

    公开(公告)日：2021-04-27

    申请号：US16715258

    申请日：2019-12-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Duck-mahn Oh ,  Jong-an Kim ,  Si-hyeon Choi ,  Young-hoon Sohn ,  Yu-sin Yang ,  Chi-hoon Lee

    IPC: G01B11/06

    Abstract: A method for nondestructive measurement of an underlying layer thickness includes irradiating, with a pump laser pulse, a sample to induce generation of an acoustic wave in the sample such that the acoustic wave propagates through the sample over time, where the sample includes a substrate, an underlying layer on the substrate, and an overlying layer on the underlying layer and the underlying layer is isolated from an exterior of the sample by at least the overlying layer, irradiating the sample with a probe laser pulse after irradiating the sample with the pump laser pulse, determining a reflectance variation of the sample over time, based on monitoring a variation of a reflection of the probe laser pulse from the sample over time, to generate a first graph showing a variation of reflectance of the sample over time, and determining a thickness of the underlying layer based on the first graph.

    Thickness prediction network learning method, semiconductor device manufacturing method, and semiconductor material deposition equipment
    9.
    发明授权
    Thickness prediction network learning method, semiconductor device manufacturing method, and semiconductor material deposition equipment 有权

    公开(公告)号：US11494642B2

    公开(公告)日：2022-11-08

    申请号：US16678755

    申请日：2019-11-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Su-il Cho ,  Sung-yoon Ryu ,  Yu-sin Yang ,  Chi-hoon Lee ,  Hyun-su Kwak ,  Jung-won Kim

    IPC: G06N3/08 ,  C23C16/52 ,  H01L27/115 ,  H01L21/66

    Abstract: A thickness prediction network learning method includes measuring spectrums of optical characteristics of a plurality of semiconductor structures each including a substrate and first and second semiconductor material layers alternately stacked thereon to generate sets of spectrum measurement data, measuring thicknesses of the first and second semiconductor material layers to generate sets of thickness data, training a simulation network using the sets of spectrum measurement data and the sets of thickness data, generating sets of spectrum simulation data of spectrums of the optical characteristics of a plurality of virtual semiconductor structures based on thicknesses of first and second virtual semiconductor material layers using the simulation network, each of the first and second virtual semiconductor layers including the same material as the first and second semiconductor material layers, respectively; and training a thickness prediction network by using the sets of spectrum measurement data and the sets of spectrum simulation data.

    Methods of manufacturing semiconductor device
    10.
    发明授权
    Methods of manufacturing semiconductor device 有权

    公开(公告)号：US11181831B2

    公开(公告)日：2021-11-23

    申请号：US16558860

    申请日：2019-09-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyoung-hwan Lee ,  Young-ho Kwon ,  Souk Kim ,  Young-hoon Sohn ,  Yu-sin Yang

    IPC: G03F7/20

    Abstract: A method of manufacturing a semiconductor device includes forming a plurality of overlay molds on a semiconductor structure by developing a photoresist material layer of the semiconductor structure, the semiconductor structure including a first layer having a plurality of overlay marks, the plurality of overlay molds at least partially overlapping at least some of the plurality of overlay marks; and measuring one or more overlays by radiating a light having a wavelength band onto the semiconductor structure, each of the one or more overlays indicating an amount of consistency of the first layer and a second layer of the semiconductor structure, the wavelength band being set based on the plurality of overlay marks and the plurality of overlay molds, the second layer being between the first layer and the photoresist material layer.

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