公开(公告)号：US20230195195A1

公开(公告)日：2023-06-22

申请号：US18110072

申请日：2023-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myungkee LEE ,  Chiwoong BYUN

IPC: G06F1/3225 ,  G06F1/3234

CPC classification number: G06F1/3225 ,  G06F1/3275

Abstract: Provided are a memory control method and an electronic device performing the method. A memory control method according to an embodiment may include measuring an internal temperature of a processor by a thermal manage unit, predicting a leakage current of a first memory based on the internal temperature and a voltage applied to the first memory, and controlling the operation of the first memory. The processor may access a second memory following accessing the first memory.