METHOD OF MONITORING SEMICONDUCTOR FABRICATION PROCESS USING XPS
    1.
    发明申请
    METHOD OF MONITORING SEMICONDUCTOR FABRICATION PROCESS USING XPS 审中-公开
    使用XPS监测半导体制造工艺的方法

    公开(公告)号:US20140342477A1

    公开(公告)日:2014-11-20

    申请号:US14196184

    申请日:2014-03-04

    CPC classification number: H01L22/12

    Abstract: A method of monitoring a semiconductor fabrication process including forming a barrier pattern on a substrate, forming a sacrificial pattern on the barrier pattern, removing the sacrificial pattern to expose a surface of the barrier pattern, generating photoelectrons by irradiating X-rays to a surface of the substrate, and inferring at least one material existing on the surface of the substrate by collecting and analyzing the photoelectrons may be provided.

    Abstract translation: 一种监测半导体制造工艺的方法,包括在衬底上形成阻挡图案,在阻挡图案上形成牺牲图案,去除牺牲图案以暴露阻挡图案的表面,通过将X射线照射到 可以提供基板,并且通过收集和分析光电子来推断存在于基板的表面上的至少一种材料。

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