公开(公告)号：US20140264052A1

公开(公告)日：2014-09-18

申请号：US14197608

申请日：2014-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woong-Kyu SON ,  Kwang-Hoon KIM ,  Deok-Yong KIM ,  Sung-Soo MOON ,  Jung-Hoon BYUN ,  Ji-Hye LEE ,  Choon-Shik LEEM ,  Soo-Bok CHIN

IPC: G01N21/33 ,  G01N21/21

CPC classification number: H01L22/12 ,  G01N21/21 ,  G01N21/33 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/8848 ,  G03F7/70625

Abstract: The inventive concept provides apparatuses and methods for monitoring semiconductor fabrication processes in real time using polarized light. In some embodiments, the apparatus comprises a light source configured to generate light, a beam splitter configured to reflect the light toward the wafer being processed, an objective polarizer configured to polarize the light reflected toward the wafer and to allow light reflected by the wafer to pass therethrough, a blaze grating configured to separate light reflected by the wafer according to wavelength, an array detector configured to detect the separated light and an analyzer to analyze the three-dimensional profile of the structure/pattern being formed in the wafer.

Abstract translation: 本发明的概念提供了使用偏振光来实时监控半导体制造工艺的装置和方法。 在一些实施例中，该装置包括被配置为产生光的光源，被配置为将光朝向正被处理的晶片反射的分束器，物镜偏振器，被配置为使朝向晶片反射的光偏振，并允许由晶片反射的光 通过其配置成根据波长分离由晶片反射的光的火焰光栅，被配置为检测分离的光的阵列检测器和分析器，以分析在晶片中形成的结构/图案的三维轮廓。

公开(公告)号：US20140342477A1

公开(公告)日：2014-11-20

申请号：US14196184

申请日：2014-03-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Choon-Shik LEEM ,  Deok-Yong KIM ,  Sang-Ho SONG ,  Chul-Gi SONG ,  Ho-Yeol LEE ,  Soo-Bok CHIN

IPC: H01L21/66

CPC classification number: H01L22/12

Abstract: A method of monitoring a semiconductor fabrication process including forming a barrier pattern on a substrate, forming a sacrificial pattern on the barrier pattern, removing the sacrificial pattern to expose a surface of the barrier pattern, generating photoelectrons by irradiating X-rays to a surface of the substrate, and inferring at least one material existing on the surface of the substrate by collecting and analyzing the photoelectrons may be provided.

Abstract translation: 一种监测半导体制造工艺的方法，包括在衬底上形成阻挡图案，在阻挡图案上形成牺牲图案，去除牺牲图案以暴露阻挡图案的表面，通过将X射线照射到 可以提供基板，并且通过收集和分析光电子来推断存在于基板的表面上的至少一种材料。

公开(公告)号：US20140306109A1

公开(公告)日：2014-10-16

申请号：US14230506

申请日：2014-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Cheon SUN ,  Hyung-Seop KIM ,  Hee-Won SUNWOO ,  Byoung-Ho LEE ,  Dong-Chul IHM ,  Soo-Bok CHIN

IPC: G01N23/225 ,  H01J37/26

CPC classification number: G01N23/2251 ,  G01N2223/611 ,  G01N2223/6462 ,  H01J37/26 ,  H01J37/3178

Abstract: A method for detecting defects includes irradiating at least one electron beam into a first region of a substrate, irradiating at least one electron beam into a second region electrically connected to the first region, and detecting secondary electrons emitted from the second region. The electron beam irradiated into the first region may be the same or different from the electron beam irradiated into the second region. Alternatively, different beams may be simultaneously irradiated into the first and second regions. An image generated based on the secondary electrons shows a defect in the substrate as a region having a grayscale difference with other regions in the image.

Abstract translation: 一种用于检测缺陷的方法包括将至少一个电子束照射到衬底的第一区域中，将至少一个电子束照射到与第一区域电连接的第二区域中，以及检测从第二区域发射的二次电子。 照射到第一区域的电子束可以与照射到第二区域的电子束相同或不同。 或者，可以将不同的光束同时照射到第一和第二区域中。 基于二次电子产生的图像在基板中显示出与图像中的其它区域具有灰度差的区域的缺陷。