公开(公告)号：US20160141417A1

公开(公告)日：2016-05-19

申请号：US14920267

申请日：2015-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan-Jin PARK ,  Chung-Hwan SHIN ,  Sung-Woo KANG ,  Young-Mook OH ,  Sun-Jung LEE ,  Jeong-Nam HAN

IPC: H01L29/78

CPC classification number: H01L29/66545 ,  H01L21/28518 ,  H01L21/76816 ,  H01L21/76831 ,  H01L23/485 ,  H01L29/66795 ,  H01L29/7855 ,  H01L2029/7858 ,  H01L2221/1063

Abstract: A semiconductor device includes an active fin formed to extend in a first direction, a gate formed on the active fin and extending in a second direction crossing the first direction, a source/drain formed on upper portions of the active fin and disposed at one side of the gate, an interlayer insulation layer covering the gate and the source/drain, a source/drain contact passing through the interlayer insulation layer to be connected to the source/drain and including a first contact region and a second contact region positioned between the source/drain and the first contact region, and a spacer layer formed between the first contact region and the interlayer insulation layer. A width of the second contact region in the first direction is greater than the sum of a width of the first contact region in the first direction and a width of the spacer layer in the first direction.

Abstract translation: 半导体器件包括形成为沿第一方向延伸的有源鳍片，形成在有源鳍片上并在与第一方向交叉的第二方向上延伸的栅极，形成在有源鳍片的上部上并设置在一侧的源极/漏极 栅极，覆盖栅极和源极/漏极的层间绝缘层，穿过层间绝缘层的源极/漏极接触件，连接到源极/漏极，并且包括第一接触区域和位于第二接触区域之间的第二接触区域 源极/漏极和第一接触区域，以及形成在第一接触区域和层间绝缘层之间的间隔层。 第一方向上的第二接触区域的宽度大于第一方向上的第一接触区域的宽度和间隔层在第一方向上的宽度的总和。