公开(公告)号：US20160141417A1

公开(公告)日：2016-05-19

申请号：US14920267

申请日：2015-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan-Jin PARK ,  Chung-Hwan SHIN ,  Sung-Woo KANG ,  Young-Mook OH ,  Sun-Jung LEE ,  Jeong-Nam HAN

IPC: H01L29/78

CPC classification number: H01L29/66545 ,  H01L21/28518 ,  H01L21/76816 ,  H01L21/76831 ,  H01L23/485 ,  H01L29/66795 ,  H01L29/7855 ,  H01L2029/7858 ,  H01L2221/1063

Abstract: A semiconductor device includes an active fin formed to extend in a first direction, a gate formed on the active fin and extending in a second direction crossing the first direction, a source/drain formed on upper portions of the active fin and disposed at one side of the gate, an interlayer insulation layer covering the gate and the source/drain, a source/drain contact passing through the interlayer insulation layer to be connected to the source/drain and including a first contact region and a second contact region positioned between the source/drain and the first contact region, and a spacer layer formed between the first contact region and the interlayer insulation layer. A width of the second contact region in the first direction is greater than the sum of a width of the first contact region in the first direction and a width of the spacer layer in the first direction.

Abstract translation: 半导体器件包括形成为沿第一方向延伸的有源鳍片，形成在有源鳍片上并在与第一方向交叉的第二方向上延伸的栅极，形成在有源鳍片的上部上并设置在一侧的源极/漏极 栅极，覆盖栅极和源极/漏极的层间绝缘层，穿过层间绝缘层的源极/漏极接触件，连接到源极/漏极，并且包括第一接触区域和位于第二接触区域之间的第二接触区域 源极/漏极和第一接触区域，以及形成在第一接触区域和层间绝缘层之间的间隔层。 第一方向上的第二接触区域的宽度大于第一方向上的第一接触区域的宽度和间隔层在第一方向上的宽度的总和。

公开(公告)号：US20200027786A1

公开(公告)日：2020-01-23

申请号：US16282441

申请日：2019-02-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hyun LEE ,  Sung-Woo KANG ,  Keun-Hee BAI ,  Hak-Yoon AHN ,  Seong-Han OH ,  Young-Mook OH

IPC: H01L21/768 ,  H01L27/11 ,  H01L27/088 ,  H01L23/535 ,  H01L29/49 ,  H01L29/51 ,  H01L21/8234

Abstract: A semiconductor device includes gates extending in a first direction on a substrate, each gate of the gates including a gate insulation layer, a gate electrode, and a first spacer, first contact plugs contacting the substrate between adjacent ones of the gates, the first contact plugs being spaced apart from sidewalls of corresponding ones of the gates, a second contact plug contacting an upper surface of a corresponding gate electrode, the second contact plug being between first contact plugs, and an insulation spacer in a gap between the second contact plug and an adjacent first contact plug, the insulation spacer contacting sidewalls of the second contact plug and the adjacent first contact plug, and upper surfaces of the second contact plug and the adjacent first contact plug being substantially coplanar with each other.

公开(公告)号：US20190164774A1

公开(公告)日：2019-05-30

申请号：US16127443

申请日：2018-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Hyun LEE ,  Jeon-Il LEE ,  Sung-Woo KANG ,  Hong-Sik SHIN ,  Young-Mook OH ,  Seung-Min LEE

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/768 ,  H01L21/033 ,  H01L21/8234

Abstract: An etching method includes providing a plasma of a first treatment gas to an etching-object to form a deposition layer on the etching-object, the first treatment gas including a fluorocarbon gas and an inert gas, and the etching-object including a first region including silicon oxide and a second region including silicon nitride, providing a plasma of an inert gas to the etching-object having the deposition layer thereon to activate an etching reaction of the silicon oxide, wherein a negative direct current voltage is applied to an opposing part that is spaced apart from the etching-object so as to face an etching surface of the etching-object, the opposing part including silicon, and subsequently, providing a plasma of a second treatment gas to remove an etching reaction product, the second treatment gas including an inert gas and an oxygen-containing gas.

公开(公告)号：US20180190780A1

公开(公告)日：2018-07-05

申请号：US15652396

申请日：2017-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bok-Young LEE ,  Sung-Woo KANG ,  Sang-Hyun LEE ,  Hak-Yoon AHN ,  Young-Mook OH ,  In-Keun LEE ,  Seong-Han OH ,  Young-Hun CHOI

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/08 ,  H01L29/45 ,  H01L21/8234 ,  H01L23/535 ,  H01L27/088

CPC classification number: H01L29/41791 ,  H01L21/823431 ,  H01L21/823475 ,  H01L23/535 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848 ,  H01L29/7851

Abstract: A semiconductor device includes an active region in a shape of a fin extending in a first direction, the fin having source/drain regions spaced apart therein, gate structures crossing the fin between the source/drain regions, each including a gate electrode, a first contact structure in electrical contact with a first source/drain region, the first contact structure including a first lower contact and a first upper contact directly thereon, a second contact structure in electrical contact with a gate electrode of a gate structure, the second contact structure including a second lower contact and a second upper contact directly thereon, and a third contact structure in electrical contact with a gate electrode of a second gate structure and in electrical contact with a second source drain region, the third contact structure including a third lower contact and a third upper contact directly thereon.