公开(公告)号：US11227930B2

公开(公告)日：2022-01-18

申请号：US16750826

申请日：2020-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangmin Lee ,  Youngchang Yoon ,  Daehoon Kwon ,  Jaehyup Kim

IPC: H03G3/30 ,  H01L29/43 ,  H01L29/10 ,  H03F3/45 ,  H03G1/00 ,  H03F3/195 ,  H03K17/687

Abstract: The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE).
An amplifier is provided. The amplifier includes a first resistor electrically connected to the input terminal, a second resistor electrically connected to the output terminal, a switch including a metal-oxide-semiconductor field-effect transistor (MOSFET) and electrically connected to one end of the second resistor, and a switch control processor configured to electrically connect the gate terminal of the MOSFET constituting the switch and the bulk terminal of the MOSFET constituting the switch to an impedance having an impedance value higher than a preset first threshold.

公开(公告)号：US11342893B2

公开(公告)日：2022-05-24

申请号：US16750552

申请日：2020-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangmin Lee ,  Daehoon Kwon ,  Jaehyup Kim

IPC: H03F3/24 ,  H03F1/42 ,  H03F3/45 ,  H04B1/40

Abstract: The apparatus relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long-Term Evolution (LTE). The disclosure relates to an apparatus including an electronic circuit for amplifying a signal. The apparatus includes a transceiver including an amplification circuit, and at least one processor coupled to the transceiver. The amplification circuit includes a first path to generate a first current corresponding to a voltage of an input signal, a second path to generate a second current corresponding to a voltage of the input signal, a separation unit to control each of the first current and the second current, a current mirror to generate a third current corresponding to the first current, and a folding unit to generate an output signal on the basis of the second current and the third current.

公开(公告)号：US11201226B2

公开(公告)日：2021-12-14

申请号：US16750826

申请日：2020-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangmin Lee ,  Youngchang Yoon ,  Daehoon Kwon ,  Jaehyup Kim

IPC: H03G3/30 ,  H01L29/43 ,  H01L29/10 ,  H03F3/45 ,  H03G1/00 ,  H03F3/195 ,  H03K17/687

Abstract: The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE).
An amplifier is provided. The amplifier includes a first resistor electrically connected to the input terminal, a second resistor electrically connected to the output terminal, a switch including a metal-oxide-semiconductor field-effect transistor (MOSFET) and electrically connected to one end of the second resistor, and a switch control processor configured to electrically connect the gate terminal of the MOSFET constituting the switch and the bulk terminal of the MOSFET constituting the switch to an impedance having an impedance value higher than a preset first threshold.