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公开(公告)号：US10048601B2
公开(公告)日：2018-08-14
申请号：US15160540
申请日：2016-05-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hak-Seung Han , Dong-Gun Lee , Dong-Hoon Chung
Abstract: An apparatus for measuring a mask error and a method for measuring a mask error are provided. The apparatus for measuring a mask error includes a stage configured to accommodate a reference mask having a reference pattern, and a target mask adjacent to the reference mask such that a mask pattern of the target mask faces the reference pattern, a light source configured to irradiate the first beam onto the reference mask and the target mask, a light receiving unit including an image sensor, and the image sensor configured to receive a composite image including a first image generated from the reference pattern and a second image generated from the mask pattern, and generate a third image from the first image and the second image, and a measuring unit configured to measure an error of the mask pattern from the third image.
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公开(公告)号：US09892500B2
公开(公告)日：2018-02-13
申请号：US14710872
申请日：2015-05-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyung-Joo Lee , Won-Joo Park , Seuk-Hwan Choi , Byung-Gook Kim , Dong-Hoon Chung
CPC classification number: G06T7/0004 , G05B2219/45027 , G06T2207/10061 , G06T2207/30148
Abstract: A method for measuring a critical dimension of a mask pattern, including generating a mask pattern using an optically proximity-corrected (OPC) mask design including at least one block; measuring a first critical dimension of a target-region of interest (target-ROI) including neighboring blocks having a same critical dimension (CD), in the mask pattern; determining a group region of interest including the target-ROI and at least one neighboring block adjacent to the target-ROI; measuring second CDs of the neighboring blocks of the group region of interest; and correcting a measuring value of the first CD using a measuring value of the second CDs.
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