公开(公告)号：US20190139771A1

公开(公告)日：2019-05-09

申请号：US16037652

申请日：2018-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-woo Kang ,  Ji-ho Yoo ,  Dong-hoon Khang ,  Seon-bae Kim ,  Moon-han Park

IPC: H01L21/266 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/11

Abstract: To manufacture an integrated circuit device, a diffusion buffer layer and a carbon-containing layer are sequentially formed on a plurality of fin-type active regions formed in a substrate. A carbon-containing mask pattern is formed to have an opening exposing a portion of the diffusion buffer layer by etching the carbon-containing layer using an etching gas including an oxygen atom while the diffusion buffer layer is blocking oxygen from diffusing into the fin-type active regions. Impurity ions are implanted into some fin-type active regions through the opening and the diffusion buffer layer using the carbon-containing mask pattern as an ion-implantation mask, the some fin-type active regions being selected from among the plurality of fin-type active regions.

公开(公告)号：US10755932B2

公开(公告)日：2020-08-25

申请号：US16037652

申请日：2018-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-woo Kang ,  Ji-ho Yoo ,  Dong-hoon Khang ,  Seon-bae Kim ,  Moon-han Park

IPC: H01L21/336 ,  H01L29/66 ,  H01L29/78 ,  H01L21/266 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/11 ,  H01L21/027 ,  H01L21/033

Abstract: To manufacture an integrated circuit device, a diffusion buffer layer and a carbon-containing layer are sequentially formed on a plurality of fin-type active regions formed in a substrate. A carbon-containing mask pattern is formed to have an opening exposing a portion of the diffusion buffer layer by etching the carbon-containing layer using an etching gas including an oxygen atom while the diffusion buffer layer is blocking oxygen from diffusing into the fin-type active regions. Impurity ions are implanted into some fin-type active regions through the opening and the diffusion buffer layer using the carbon-containing mask pattern as an ion-implantation mask, the some fin-type active regions being selected from among the plurality of fin-type active regions.