公开(公告)号：US20170207263A1

公开(公告)日：2017-07-20

申请号：US15408085

申请日：2017-01-17

Applicant: Samsung Electronics Co., Ltd .

Inventor： Donghyuk Park ,  SEUNGWON CHA ,  Cheolju KANG ,  YITAE KIM ,  JONGEUN PARK ,  JUNGCHAK AHN ,  Yujung CHOI

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

Abstract: An image sensor and a method of fabricating the same are disclosed. The image sensor may include a substrate including an active region defined by a device isolation layer, a photoelectric conversion layer, a well impurity layer, a floating diffusion region, and a transfer gate. When viewed in a plan view, a lower portion of the transfer gate may include a first surface in contact with the device isolation layer, a second surface substantially perpendicular to the first surface, and a third surface connected to the first and second surfaces. The third surface may face the floating diffusion region. A first portion of a gate insulating layer may be adjacent to the third surface and thinner than a portion adjacent to the first surface or the second surface, and this may facilitate more efficient transfer of an electron from the photoelectric conversion layer to the floating diffusion region.

公开(公告)号：US09865635B2

公开(公告)日：2018-01-09

申请号：US15408085

申请日：2017-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghyuk Park ,  Seungwon Cha ,  Cheolju Kang ,  Yitae Kim ,  Jongeun Park ,  Jungchak Ahn ,  Yujung Choi

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

Abstract: An image sensor and a method of fabricating the same are disclosed. The image sensor may include a substrate including an active region defined by a device isolation layer, a photoelectric conversion layer, a well impurity layer, a floating diffusion region, and a transfer gate. When viewed in a plan view, a lower portion of the transfer gate may include a first surface in contact with the device isolation layer, a second surface substantially perpendicular to the first surface, and a third surface connected to the first and second surfaces. The third surface may face the floating diffusion region. A first portion of a gate insulating layer may be adjacent to the third surface and thinner than a portion adjacent to the first surface or the second surface, and this may facilitate more efficient transfer of an electron from the photoelectric conversion layer to the floating diffusion region.

公开(公告)号：US20170104021A1

公开(公告)日：2017-04-13

申请号：US15290661

申请日：2016-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongeun Park ,  Yitae Kim ,  Donghyuk Park ,  Jungchak Ahn

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14638 ,  H01L27/14643

Abstract: An image sensor includes a substrate including an active region defined by a device isolation layer, a photoelectric conversion layer in the substrate, a floating diffusion region in the substrate at an edge of the active region, and a transfer gate on the active region. The transfer gate is in contact with a portion of the device isolation layer adjacent the active region.

公开(公告)号：US09991299B2

公开(公告)日：2018-06-05

申请号：US15290661

申请日：2016-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongeun Park ,  Yitae Kim ,  Donghyuk Park ,  Jungchak Ahn

IPC: H01L31/062 ,  H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14638 ,  H01L27/14643

Abstract: An image sensor includes a substrate including an active region defined by a device isolation layer, a photoelectric conversion layer in the substrate, a floating diffusion region in the substrate at an edge of the active region, and a transfer gate on the active region. The transfer gate is in contact with a portion of the device isolation layer adjacent the active region.