公开(公告)号：US20220102405A1

公开(公告)日：2022-03-31

申请号：US17239291

申请日：2021-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae KIM ,  Chang Kyu LEE ,  Dongmo IM ,  Ju-eun KIM ,  Miseon PARK ,  Jungim CHOE ,  Soojin HONG

IPC: H01L27/146

Abstract: An image sensor is provided and may include a semiconductor substrate having a surface and including trench, the trench extending from the surface into the semiconductor substrate, an insulating pattern provided in the trench and a doped region in the semiconductor substrate and on the insulating patterns. The doped region includes a side portion on a side surface of the insulating pattern, and a bottom portion on a bottom surface of the insulating pattern. A thickness of the side portion of the doped region is from 85% to 115% of a thickness of the bottom portion of the doped region, and a number of dopants per unit area in the side portion of the doped region is from 85% to 115% of a number of dopants per unit area in the bottom portion.

公开(公告)号：US20200251521A1

公开(公告)日：2020-08-06

申请号：US16857839

申请日：2020-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-Min LEE ,  Seokjin KWON ,  Hyeyun PARK ,  Beomsuk LEE ,  Dongmo IM

IPC: H01L27/146 ,  H04N5/374

Abstract: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.

公开(公告)号：US20220102398A1

公开(公告)日：2022-03-31

申请号：US17246064

申请日：2021-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jameyung KIM ,  Tae-Hun LEE ,  Dongmo IM ,  Kwansik CHO

IPC: H01L27/146

Abstract: An image sensor includes a substrate, and a pixel separation pattern disposed in the substrate and interposed between a plurality of unit pixels. The plurality of unit pixels include a first unit pixel region and a second unit pixel region adjacent to the first unit pixel region in a first direction. The first unit pixel region and the second unit pixel region respectively include a first transfer gate and a second transfer gate. The pixel separation pattern includes a first pixel separation part interposed between the first unit pixel region and the second unit pixel region, and a second pixel separation part spaced apart from the first pixel separation part in the first direction. A top surface of the first pixel separation part is lower than a top surface of the second pixel separation part.

公开(公告)号：US20220208817A1

公开(公告)日：2022-06-30

申请号：US17562125

申请日：2021-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jameyung KIM ,  Sungin KIM ,  Dongmo IM

IPC: H01L27/146

Abstract: An image sensor includes: a semiconductor substrate including a first surface and a second surface opposite to each other; a buried transfer gate electrode arranged in a transfer gate trench extending from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the buried transfer gate electrode has an upper surface arranged at a level lower than that of the first surface of the semiconductor substrate with respect to the second surface of the semiconductor substrate; and a transfer gate spacer arranged on an upper sidewall of the transfer gate trench and on the buried transfer gate electrode.