公开(公告)号：US20240213160A1

公开(公告)日：2024-06-27

申请号：US18535143

申请日：2023-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoungpil PARK ,  Doohwan PARK ,  Sanghyun LEE ,  Hyeonmin JEON

IPC: H01L23/532 ,  H01L23/522

CPC classification number: H01L23/5329 ,  H01L23/5226 ,  H01L23/49816

Abstract: A semiconductor device includes a first wiring level layer including a lower wiring layer, a second wiring level layer on the first wiring level layer and including an upper wiring layer, a via level layer positioned between the first wiring level layer and the second wiring level layer and including a via connecting the lower wiring layer to the upper wiring layer, and a reinforcing insulating layer positioned between the lower wiring layer and the upper wiring layer in the via level layer.

公开(公告)号：US20230170296A1

公开(公告)日：2023-06-01

申请号：US17961056

申请日：2022-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Anthony Dongick LEE ,  Sangcheol NA ,  Kichul PARK ,  Doohwan PARK ,  Kyoungwoo LEE ,  Rakhwan KIM ,  Yoonsuk KIM ,  Jinnam KIM ,  Hoonjoo NA ,  Eunji JUNG ,  Juyoung JUNG

IPC: H01L23/522 ,  H01L23/532

CPC classification number: H01L23/5226 ,  H01L23/53238 ,  H01L23/53223 ,  H01L23/53266

Abstract: A semiconductor device includes a substrate. A wiring layer is over the substrate. A first via structure directly contacts a lower portion of the wiring layer. A second via structure directly contacts an upper portion of the wiring layer. The first via structure generates first stress in the wiring layer. The second via structure generates second stress in the wiring layer. The second stress is of an opposite type to the first stress. The first stress and the second stress compensate for each other in the wiring layer.