公开(公告)号：US20240213160A1

公开(公告)日：2024-06-27

申请号：US18535143

申请日：2023-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoungpil PARK ,  Doohwan PARK ,  Sanghyun LEE ,  Hyeonmin JEON

IPC: H01L23/532 ,  H01L23/522

CPC classification number: H01L23/5329 ,  H01L23/5226 ,  H01L23/49816

Abstract: A semiconductor device includes a first wiring level layer including a lower wiring layer, a second wiring level layer on the first wiring level layer and including an upper wiring layer, a via level layer positioned between the first wiring level layer and the second wiring level layer and including a via connecting the lower wiring layer to the upper wiring layer, and a reinforcing insulating layer positioned between the lower wiring layer and the upper wiring layer in the via level layer.