公开(公告)号：US09577000B2

公开(公告)日：2017-02-21

申请号：US14956680

申请日：2015-12-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dukseo Park ,  Sangil Jung ,  Changrok Moon

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14689

Abstract: An image sensor can include a photoelectric conversion part of an active region of a substrate and a trench in the substrate. A transfer transistor gate electrode can extend from outside the trench into the trench and terminate in the trench to provide an exposed portion of the trench in the photoelectric conversion part.

Abstract translation: 图像传感器可以包括衬底的有源区的光电转换部分和衬底中的沟槽。 传输晶体管栅电极可以从沟槽的外部延伸到沟槽中并且终止于沟槽中以在光电转换部分中提供沟槽的暴露部分。