公开(公告)号：US20240126161A1

公开(公告)日：2024-04-18

申请号：US18320387

申请日：2023-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungwoo JANG ,  Sunpyo LEE ,  Euihan JUNG

IPC: G03F1/24 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F7/20

Abstract: An extreme ultraviolet (EUV) mask may include a substrate having a rectangular shape, a reflective layer on the substrate and having a rectangular shape smaller than the rectangular shape of the substrate, and an absorber layer on the reflective layer. The absorber layer may have a same shape as the rectangular shape of the reflective layer. The absorber layer may include a dummy hole pattern. The dummy hole pattern may be in a rectangular frame shape along an edge portion of the absorber layer and may include a plurality of dummy holes exposing the reflective layer.