公开(公告)号：US11812604B2

公开(公告)日：2023-11-07

申请号：US17182315

申请日：2021-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Jung Kim ,  Hye Won Kim ,  Sung Yeon Ryu

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/0335 ,  H10B12/053 ,  H10B12/09 ,  H10B12/34 ,  H10B12/50

Abstract: A semiconductor device includes a plurality of first conductive patterns extending parallel in a first direction on a substrate, a plurality of second conductive patterns extending parallel in a second direction crossing the first direction on the substrate, a plurality of buried contacts connected to the substrate between the plurality of first conductive patterns and between the plurality of second conductive patterns, and a landing pad connected to each of the buried contacts on the plurality of buried contacts. The landing pad includes a first side surface extending in the first direction in plan view and a second side surface extending in a third direction in plan view. The third direction is different from the first direction and the second direction in plan view.