公开(公告)号：US20030054605A1

公开(公告)日：2003-03-20

申请号：US10105181

申请日：2002-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wan-don Kim ,  Cha-young Yoo ,  Doo-sup Hwang ,  Jae-hyun Joo ,  Eun-ae Chung ,  Youg-kuk Jeong

IPC: H01L021/8234 ,  H01L021/8244 ,  H01L021/8242 ,  H01L021/20

CPC classification number: H01L28/55 ,  H01L28/60 ,  H01L28/91

Abstract: A method for manufacturing a capacitor of a semiconductor memory device by controlling thermal budgets is provided. In the method for manufacturing a capacitor of a semiconductor memory device, a lower electrode is formed on a semiconductor substrate. The lower electrode is heat-treated with a first thermal budget. A dielectric layer is formed on the heat-treated lower electrode. The dielectric layer is crystallized by heat-treating the dielectric layer with a second thermal budget which is smaller than the first thermal budget.

Abstract translation: 提供了一种通过控制热预算来制造半导体存储器件的电容器的方法。 在制造半导体存储器件的电容器的方法中，在半导体衬底上形成下电极。 下电极用第一热预算进行热处理。 在热处理的下电极上形成电介质层。 通过用小于第一热预算的第二热预算对介电层进行热处理来使介质层结晶。