公开(公告)号：US20040171212A1

公开(公告)日：2004-09-02

申请号：US10776053

申请日：2004-02-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-jun Won ,  Jung-hee Chung ,  Yong-kuk Jeong ,  Se-hoon Oh ,  Dae-jin Kwon ,  Cha-young Yoo

IPC: H01L021/8242 ,  H01L021/20

CPC classification number: H01L21/02068 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/91

Abstract: In a method of manufacturing a capacitor by performing a multi-stepped wet treatment on the surface of a metal electrode, a lower metal electrode of a capacitor is formed, and a primary wet treatment is performed on the surface of the lower metal electrode to remove unwanted surface oxides that may exist on the surface of the lower metal electrode. A secondary wet treatment is then performed on the surface of the lower metal electrode by using a different etchant than the etchant used in the primary wet treatment, in order to remove unwanted surface organic materials that may exist on the surface of the lower metal electrode. A dielectric layer is then formed on the lower metal electrode using a high-k dielectric material. An upper metal electrode is formed on the dielectric layer.

Abstract translation: 在通过对金属电极的表面进行多级湿式处理来制造电容器的方法中，形成电容器的下部金属电极，并对下部金属电极的表面进行一次湿式处理以除去 可能存在于下金属电极表面的不希望的表面氧化物。 然后通过使用与初次湿处理中使用的蚀刻剂不同的蚀刻剂在下金属电极的表面上进行二次湿处理，以便去除可能存在于下金属电极表面上的不希望的表面有机材料。 然后使用高k电介质材料在下金属电极上形成电介质层。 在电介质层上形成上金属电极。

公开(公告)号：US20030054605A1

公开(公告)日：2003-03-20

申请号：US10105181

申请日：2002-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wan-don Kim ,  Cha-young Yoo ,  Doo-sup Hwang ,  Jae-hyun Joo ,  Eun-ae Chung ,  Youg-kuk Jeong

IPC: H01L021/8234 ,  H01L021/8244 ,  H01L021/8242 ,  H01L021/20

CPC classification number: H01L28/55 ,  H01L28/60 ,  H01L28/91

Abstract: A method for manufacturing a capacitor of a semiconductor memory device by controlling thermal budgets is provided. In the method for manufacturing a capacitor of a semiconductor memory device, a lower electrode is formed on a semiconductor substrate. The lower electrode is heat-treated with a first thermal budget. A dielectric layer is formed on the heat-treated lower electrode. The dielectric layer is crystallized by heat-treating the dielectric layer with a second thermal budget which is smaller than the first thermal budget.

Abstract translation: 提供了一种通过控制热预算来制造半导体存储器件的电容器的方法。 在制造半导体存储器件的电容器的方法中，在半导体衬底上形成下电极。 下电极用第一热预算进行热处理。 在热处理的下电极上形成电介质层。 通过用小于第一热预算的第二热预算对介电层进行热处理来使介质层结晶。

公开(公告)号：US20030190808A1

公开(公告)日：2003-10-09

申请号：US10426743

申请日：2003-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wan-don Kim ,  Jin-won Kim ,  Seok-jun Won ,  Cha-young Yoo

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/02183 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31604 ,  H01L28/91

Abstract: A metal-insulator-metal (MIM) capacitor of a semiconductor device, and a manufacturing method thereof, includes a lower electrode formed of a refractory metal or a conductive compound including the refractory metal, a dielectric film formed of a high dielectric material, and an upper electrode formed of a platinum-family metal or a platinum-family metal oxide. Accordingly, the MIM capacitor satisfies the criteria of step coverage, electrical characteristics and manufacturing costs, as compared to a conventional MIM capacitor in which the upper and lower electrodes are formed of the same material such as a platinum-family metal, a refractory metal or a conductive compound including the refractory metal. The capacitor is especially suitable for mass production in semiconductor fabrication processes.

Abstract translation: 半导体器件的金属 - 绝缘体 - 金属（MIM）电容器及其制造方法包括由难熔金属形成的下电极或包含难熔金属的导电化合物，由高电介质材料形成的电介质膜，以及 由铂族金属或铂族金属氧化物形成的上电极。 因此，与常规的MIM电容器相比，MIM电容器满足阶梯覆盖，电特性和制造成本的标准，其中上电极和下电极由相同的材料形成，例如铂族金属，难熔金属或 包括难熔金属的导电化合物。 电容器特别适用于半导体制造工艺中的批量生产。