公开(公告)号：US20230014468A1

公开(公告)日：2023-01-19

申请号：US17691293

申请日：2022-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junmo PARK ,  Yeonho PARK ,  Kyubong CHOI ,  Eunsil PARK ,  Junseok LEE ,  Jinseok LEE

IPC: H01L27/088 ,  H01L21/8234 ,  H01L21/762

Abstract: A semiconductor device includes a substrate including a first active fin and a second active fin respectively extending in a first direction, the substrate having a recess between the first and second active fins, a device isolation film on the substrate, first and second gate structures on the first and second active fins, respectively, and extending in a second direction, and a field separation layer having a first portion between the first and second active fin and in the recess, and a second portion extending from both sides of the first portion in the second direction to an upper surface of the device isolation film. The recess has a bottom surface lower in a third direction intersecting the first direction and the second direction than the upper surface of the device isolation film, and a region of the upper surface of the device isolation film has a flat surface.