公开(公告)号：US20230238460A1

公开(公告)日：2023-07-27

申请号：US18158176

申请日：2023-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwook KIM ,  Kyung-Eun Byun ,  Keunwook Shin ,  Moonil Jung ,  Euntae Kim ,  Jeeeun Yang ,  Kwanghee Lee

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/16

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/1606

Abstract: A transistor includes an oxide semiconductor layer, a source electrode and a drain electrode disposed spaced apart from each other on the oxide semiconductor layer, a gate electrode spaced apart from the oxide semiconductor layer, a gate insulating layer disposed between the oxide semiconductor layer and the gate electrode, and a graphene layer disposed between the gate electrode and the gate insulating layer and doped with a metal.