公开(公告)号：US20190267429A1

公开(公告)日：2019-08-29

申请号：US16110521

申请日：2018-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gang ZHANG

IPC: H01L27/30 ,  H01L27/28 ,  H01L51/44

Abstract: An image sensor includes a substrate which includes a first surface and a light-incident second surface facing the first surface, a first semiconductor photoelectric conversion element inside the substrate, an organic photoelectric conversion element on the second surface of the substrate, a first floating diffusion region on the first surface of the substrate, a first transfer transistor having a first end connected to the first semiconductor photoelectric conversion element and a second end connected to the first floating diffusion region, and a second transfer transistor having a first end connected to the organic photoelectric conversion element and a second end connected to the first floating diffusion region. The first semiconductor photoelectric conversion element, the first floating diffusion region, and the first transfer transistor and the second transfer transistor may be in a first pixel region of the substrate.

公开(公告)号：US20220139995A1

公开(公告)日：2022-05-05

申请号：US17577615

申请日：2022-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa KIM ,  JungHun KIM ,  Sang-Su PARK ,  Beomsuk LEE ,  Gang ZHANG ,  Jaesung HUR

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/335 ,  G02B5/20 ,  H01L25/16

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

公开(公告)号：US20210366974A1

公开(公告)日：2021-11-25

申请号：US17398493

申请日：2021-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gang ZHANG ,  Shi Li QUAN ,  Hyung-yong KIM ,  Seug-gab PARK ,  In-gyu BAEK ,  Kyung-rae BYUN ,  Jin-yong CHOI

IPC: H01L27/146 ,  H04N5/335

Abstract: The inventive concepts provide a three-dimensional (3D) image sensor, based on structured light (SL), having a structure in which difficulty in a manufacturing process of a wiring layer is decreased and/or an area of a bottom pad of a capacitor is increased. The 3D image sensor includes: a pixel area including a photodiode in a semiconductor substrate and a gate group including a plurality of gates; a multiple wiring layer on an upper portion of the pixel area, the multiple wiring layer including at least two wiring layers; and a capacitor structure between a first wiring layer on a lowermost wiring layer of the multiple wiring layer and a second wiring layer on the first wiring layer, the capacitor structure including a bottom pad, a top pad, and a plurality of capacitors, wherein the bottom pad is connected to the first wiring layer.

公开(公告)号：US20200176504A1

公开(公告)日：2020-06-04

申请号：US16787408

申请日：2020-02-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa KIM ,  JungHun KIM ,  Sang-Su PARK ,  Beomsuk LEE ,  Gang ZHANG ,  Jaesung HUR

IPC: H01L27/146 ,  H01L25/16 ,  G02B5/20 ,  H04N5/335 ,  H01L27/148

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

公开(公告)号：US20190131340A1

公开(公告)日：2019-05-02

申请号：US16003339

申请日：2018-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa KIM ,  JungHun KIM ,  Sang-Su PARK ,  Beomsuk LEE ,  Gang ZHANG ,  Jaesung HUR

IPC: H01L27/146 ,  H01L27/148 ,  H01L25/16 ,  G02B5/20 ,  H04N5/335

CPC classification number: H01L27/14647 ,  G02B5/20 ,  H01L25/167 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14665 ,  H01L27/14689 ,  H01L27/14812 ,  H04N5/335

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.