公开(公告)号：US20190067294A1

公开(公告)日：2019-02-28

申请号：US15871957

申请日：2018-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-won LEE ,  Jae-kang KOH ,  Geum-bi MUN ,  Byoung-deog CHOI

IPC: H01L27/108 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/02 ,  H01L21/768

Abstract: A first bit line structure is disposed between a first contact structure and a second contact structure. A first air spacer is interposed between the first contact structure and the first bit line structure. A first separation space is connected to an air entrance of the first air spacer and interposed between the first contact structure and the first bit line structure. A cover insulating pattern with a gap portion is interposed between the first contact structure and the second contact structure. The gap portion has a downwardly-decreasing width. An air capping pattern covers the cover insulating pattern to seal the first separation space.