公开(公告)号：US20160351711A1

公开(公告)日：2016-12-01

申请号：US15138661

申请日：2016-04-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byeong-ju BAE ,  Seung-heon LEE ,  Byoung-deog CHOI

IPC: H01L29/78 ,  H01L27/118 ,  H01L21/02 ,  H01L29/423 ,  H01L21/28

CPC classification number: H01L27/11807 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L27/10823 ,  H01L27/10891 ,  H01L29/4236 ,  H01L29/7843

Abstract: A method of manufacturing a semiconductor device includes forming a word line trench in an active region, forming a gate dielectric layer to cover at least a portion of the word line trench, forming a word line within the word line trench to define a capping trench, and/or forming a stressor having a compressive stress within the capping trench. The stressor is formed by using a plasma source.

Abstract translation: 一种制造半导体器件的方法包括在有源区中形成字线沟槽，形成栅介质层以覆盖字线沟槽的至少一部分，在字线沟槽内形成字线以限定封盖沟槽， 和/或形成在封盖沟槽内具有压应力的应力源。 应力源通过使用等离子体源形成。

公开(公告)号：US20190067294A1

公开(公告)日：2019-02-28

申请号：US15871957

申请日：2018-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-won LEE ,  Jae-kang KOH ,  Geum-bi MUN ,  Byoung-deog CHOI

IPC: H01L27/108 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/02 ,  H01L21/768

Abstract: A first bit line structure is disposed between a first contact structure and a second contact structure. A first air spacer is interposed between the first contact structure and the first bit line structure. A first separation space is connected to an air entrance of the first air spacer and interposed between the first contact structure and the first bit line structure. A cover insulating pattern with a gap portion is interposed between the first contact structure and the second contact structure. The gap portion has a downwardly-decreasing width. An air capping pattern covers the cover insulating pattern to seal the first separation space.