公开(公告)号：US20190157452A1

公开(公告)日：2019-05-23

申请号：US16028083

申请日：2018-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shin Hye Kim ,  Kyung Seok Oh ,  Gu Young Cho ,  Sang Jin Hyun

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L23/532

Abstract: A semiconductor device includes a substrate and a plurality of semiconductor fins protruding from the substrate. Source/drain regions are disposed at tops of respective ones of the semiconductor fins, each having a width greater than a width of individual ones of the semiconductor fins. A gate electrode is disposed on side surfaces of the semiconductor fins below the source/drain regions. Insulating layers contact the side surfaces of the semiconductor fins and cover upper surfaces of the gate electrode.

公开(公告)号：US10686069B2

公开(公告)日：2020-06-16

申请号：US16028083

申请日：2018-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shin Hye Kim ,  Kyung Seok Oh ,  Gu Young Cho ,  Sang Jin Hyun

IPC: H01L29/78 ,  H01L29/10 ,  H01L23/532 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L29/08 ,  H01L21/768

Abstract: A semiconductor device includes a substrate and a plurality of semiconductor fins protruding from the substrate. Source/drain regions are disposed at tops of respective ones of the semiconductor fins, each having a width greater than a width of individual ones of the semiconductor fins. A gate electrode is disposed on side surfaces of the semiconductor fins below the source/drain regions. Insulating layers contact the side surfaces of the semiconductor fins and cover upper surfaces of the gate electrode.