公开(公告)号：US20190287792A1

公开(公告)日：2019-09-19

申请号：US16165567

申请日：2018-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin PARK ,  Sang Ki NAM ,  Kyu-hee HAN ,  Jin-ok KIM ,  Jin-hong PARK ,  Gwang-we YOO

IPC: H01L21/027 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32

Abstract: A method of manufacturing an integrated circuit (IC) device includes exposing a partial region of a photoresist film formed on a main surface of a substrate to generate acid, and diffusing the acid in the partial region of the photoresist film. Diffusing the acid may include applying an electric field, in a direction perpendicular to a direction in which the main surface of the substrate extends, to the photoresist film using an electrode facing the substrate through an electric-field transmission layer filling between the photoresist film and the electrode. The electric-field transmission layer may include an ion-containing layer or a conductive polymer layer.