公开(公告)号：US20220359004A1

公开(公告)日：2022-11-10

申请号：US17679530

申请日：2022-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Gyeong Won ,  Gyu Seong Kim ,  Hyun-Jin Shin

IPC: G11C11/56 ,  G11C11/4074

Abstract: A non-volatile memory device is provided. The non-volatile memory device may include a memory cell array, a first pumping circuit configured to output a first pumping voltage, a second pumping circuit configured to pump the first pumping voltage of the first pumping circuit to output a second pumping voltage, and a pumping circuit control unit which is connected to the first pumping circuit and the second pumping circuit and configured to output at least one of the first pumping voltage and the second pumping voltage to the memory cell array. The first pumping circuit may be enabled in a first mode and a second mode different from the first mode, and the second pumping circuit may be disabled or not enabled in the first mode and enabled in the second mode.

公开(公告)号：US11984156B2

公开(公告)日：2024-05-14

申请号：US17679530

申请日：2022-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Gyeong Won ,  Gyu Seong Kim ,  Hyun-Jin Shin

IPC: G11C11/4074 ,  G11C11/56

CPC classification number: G11C11/5635 ,  G11C11/4074 ,  G11C11/5642

Abstract: A non-volatile memory device is provided. The non-volatile memory device may include a memory cell array, a first pumping circuit configured to output a first pumping voltage, a second pumping circuit configured to pump the first pumping voltage of the first pumping circuit to output a second pumping voltage, and a pumping circuit control unit which is connected to the first pumping circuit and the second pumping circuit and configured to output at least one of the first pumping voltage and the second pumping voltage to the memory cell array. The first pumping circuit may be enabled in a first mode and a second mode different from the first mode, and the second pumping circuit may be disabled or not enabled in the first mode and enabled in the second mode.