公开(公告)号：US20230162783A1

公开(公告)日：2023-05-25

申请号：US17952826

申请日：2022-09-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyuha PARK ,  Daehan KIM

IPC: G11C11/4093 ,  G11C11/408 ,  G11C11/4074

CPC classification number: G11C11/4093 ,  G11C11/4085 ,  G11C11/4074

Abstract: A non-volatile memory device includes: one or more memory blocks including a plurality of memory cells connected to a plurality of word lines, and a plurality of memory cell strings; a page buffer unit; one or more pass units including a plurality of pass transistors that may supply operation voltages to the plurality of word lines; one or more monitoring units including one or more monitoring pass transistors connected to the plurality of pass transistors; a voltage generator that may supply activation voltages to a first pass transistor, in which a leakage current is to be measured, and to the one or more monitoring pass transistors; and a control logic that may control the voltage generator to generate the activation voltages by using a voltage control signal and detect the leakage current based on monitoring voltages output from the one or more monitoring pass transistors.