公开(公告)号：US11749630B2

公开(公告)日：2023-09-05

申请号：US17199674

申请日：2021-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byungwook Kim ,  Ayoung Kim ,  Haeseong Jeong ,  Sangsu Ha

IPC: H01L23/528 ,  H01L23/532 ,  H01L23/00

CPC classification number: H01L24/14 ,  H01L23/528 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/562

Abstract: A semiconductor chip includes a back end of line (BEOL) structure on a first surface of the semiconductor substrate and including a conductive connection structure and an interlayer insulating layer covering the conductive connection structure, a conductive reinforcing layer arranged on the BEOL structure, a cover insulating layer covering the conductive reinforcing layer, an under bump metal (UBM) layer including a plurality of pad connection portions connected to the conductive reinforcing layer through openings in the cover insulating layer, and a plurality of first connection bumps arranged on the plurality of pad connection portions of the UBM layer, electrically connected to one another through the conductive reinforcing layer, and located to overlap the conductive reinforcing layer. The conductive reinforcing layer has a plate shape and extends parallel to the first surface of the semiconductor substrate.