公开(公告)号：US20240421170A1

公开(公告)日：2024-12-19

申请号：US18817453

申请日：2024-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Haeyong PARK ,  Sungsoo CHOI

IPC: H01L27/146 ,  H10K39/32

Abstract: An image sensor includes a substrate having a plurality of pixel regions and a deep device isolation pattern disposed in the substrate between the pixel regions. The pixel regions include first, second, third, and fourth pixel regions, which are adjacent to each other in first and second directions. The deep device isolation pattern includes first portions interposed between the first and second pixel regions and between the third and fourth pixel regions and spaced apart from each other in the second direction, and second portions interposed between the first and third pixel regions and between the second and fourth pixel regions and spaced apart from each other in the first direction. The first pixel region includes a first extended active pattern, which is extended to the second pixel region in the first direction and is disposed between the first portions of the deep device isolation pattern.

公开(公告)号：US20230092590A1

公开(公告)日：2023-03-23

申请号：US17834318

申请日：2022-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeyong PARK ,  Sungsoo CHOI ,  Jongeun PARK

IPC: H01L27/146

Abstract: An image sensor includes a substrate having first and second surfaces opposite each other, including first and second pixels adjacent to each other, a device isolation portion isolating the first and second pixels from each other in the substrate, a transfer gate on the first surface of the first and second pixels, a ground region in one of the first and second pixels, and a first color filter and a micro lens array layer stacked on the second surface. The deep device isolation portion includes first and second isolation portions vertically overlapping and spaced apart. The first isolation portion includes a first conductive pattern extending from the first surface toward the second surface, a high-concentration doped pattern on the first conductive pattern, and an insulating pattern between the first conductive pattern and the high-concentration doped pattern. The ground region and high-concentration doped pattern include dopants having the same conductivity type.