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    IMAGE SENSOR
    2.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20240250104A1

    公开(公告)日：2024-07-25

    申请号：US18416388

    申请日：2024-01-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gyunha PARK ,  Jeongsoon KANG ,  Jongeun PARK ,  Gwideok Ryan LEE ,  Dongseok CHO

    IPC: H01L27/146 ,  H01L23/00 ,  H04N25/79

    CPC classification number: H01L27/14634 ,  H01L24/08 ,  H01L24/80 ,  H01L27/1469 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H04N25/79

    Abstract: Provided is an image sensor including a first structure and a second structure stacked in a vertical direction, wherein the first structure includes a first pixel region, a photoelectric conversion unit in the first pixel region, a floating diffusion region in the first pixel region, a first interlayer insulating layer on the floating diffusion region, and a first pixel pad electrically connected to the floating diffusion region, and the second structure includes a second pixel region, a source-follower transistor in the second pixel region, a second interlayer insulating layer on the source-follower transistor, and a second pixel pad electrically connected to a gate of the source-follower transistor, and the image sensor includes a coupling prevention line arranged around the first and second pixel pads and electrically connected to the source region of the source-follower transistor.

    IMAGE SENSOR
    3.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20230092590A1

    公开(公告)日：2023-03-23

    申请号：US17834318

    申请日：2022-06-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Haeyong PARK ,  Sungsoo CHOI ,  Jongeun PARK

    IPC: H01L27/146

    Abstract: An image sensor includes a substrate having first and second surfaces opposite each other, including first and second pixels adjacent to each other, a device isolation portion isolating the first and second pixels from each other in the substrate, a transfer gate on the first surface of the first and second pixels, a ground region in one of the first and second pixels, and a first color filter and a micro lens array layer stacked on the second surface. The deep device isolation portion includes first and second isolation portions vertically overlapping and spaced apart. The first isolation portion includes a first conductive pattern extending from the first surface toward the second surface, a high-concentration doped pattern on the first conductive pattern, and an insulating pattern between the first conductive pattern and the high-concentration doped pattern. The ground region and high-concentration doped pattern include dopants having the same conductivity type.

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