公开(公告)号：US12224295B2

公开(公告)日：2025-02-11

申请号：US17455246

申请日：2021-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hakyu Choi ,  Yongsuk Choi ,  Keo-Sung Park ,  Dongwook Won

IPC: H01L27/146

Abstract: A method of manufacturing an image sensor includes forming a first dopant region having a second conductivity type in a semiconductor substrate including first and second surfaces. The semiconductor substrate has a first conductivity type different from the second conductivity type. The method further includes forming a pixel isolation structure defining pixel regions in the semiconductor substrate, forming a vertical trench by patterning the first surface in each of the pixel regions, forming a mask pattern exposing each of the pixel regions on the first surface, in which the mask pattern includes a residual mask pattern filling at least a portion of the vertical trench, forming a second dopant region having the second conductivity type in the semiconductor substrate by using the mask pattern as an ion-implantation mask, in which the second dopant region is adjacent to the vertical trench, and forming a transfer gate electrode in the vertical trench.

公开(公告)号：US20150145088A1

公开(公告)日：2015-05-28

申请号：US14554511

申请日：2014-11-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungkwan Kim ,  Soo-Kyung Kim ,  Jung-kuk Park ,  Myung-Sun Kim ,  Jaesung Yun ,  Junetaeg Lee ,  Hakyu Choi

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685

Abstract: A method of fabricating an image sensor is provided. The method may include preparing a substrate with first to third pixel regions, coating a first color filter layer on the substrate, sequentially forming a first sacrificial layer and a first protection layer to cover the first color filter layer, forming a first photoresist pattern on the first protection layer to be overlapped with the first pixel region, performing a first dry etching process using the first photoresist pattern as an etch mask to the first sacrificial layer and the first protection layer to form a first color filter, a first sacrificial pattern, and a first protection pattern sequentially stacked on the first pixel region, and selectively removing the first sacrificial pattern to separate the first protection pattern from the first color filter.

Abstract translation: 提供了一种制造图像传感器的方法。 该方法可以包括制备具有第一至第三像素区域的衬底，在衬底上涂覆第一滤色器层，顺序地形成第一牺牲层和第一保护层以覆盖第一滤色器层，在第一滤色器层上形成第一光致抗蚀剂图案 第一保护层与第一像素区域重叠，执行使用第一光致抗蚀剂图案作为第一牺牲层和第一保护层的蚀刻掩模的第一干蚀刻工艺以形成第一滤色器，第一牺牲图案和 第一保护图案，其顺序地堆叠在第一像素区域上，并且选择性地去除第一牺牲图案以将第一保护图案与第一滤色器分离。

公开(公告)号：US20240387590A1

公开(公告)日：2024-11-21

申请号：US18515334

申请日：2023-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinpyo Kim ,  Byungjun Park ,  Jimin Jeun ,  Hakyu Choi

IPC: H01L27/146

Abstract: An image sensor includes a substrate structure including a sensor array region and a pad region adjacent to the sensor array region. The substrate structure includes a first substrate structure and a second substrate structure. The first substrate structure is on the second substrate structure. The image sensor includes a penetrating structure including a first conductive material layer and a second conductive material layer in at least a portion of the first substrate structure. The second conductive material layer is electrically connected to the first conductive material layer and extends into the first substrate structure.

公开(公告)号：US09263495B2

公开(公告)日：2016-02-16

申请号：US14554511

申请日：2014-11-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungkwan Kim ,  Soo-Kyung Kim ,  Jung-kuk Park ,  Myung-Sun Kim ,  Jaesung Yun ,  Junetaeg Lee ,  Hakyu Choi

IPC: H01L21/00 ,  H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685

Abstract: A method of fabricating an image sensor is provided. The method may include preparing a substrate with first to third pixel regions, coating a first color filter layer on the substrate, sequentially forming a first sacrificial layer and a first protection layer to cover the first color filter layer, forming a first photoresist pattern on the first protection layer to be overlapped with the first pixel region, performing a first dry etching process using the first photoresist pattern as an etch mask to the first sacrificial layer and the first protection layer to form a first color filter, a first sacrificial pattern, and a first protection pattern sequentially stacked on the first pixel region, and selectively removing the first sacrificial pattern to separate the first protection pattern from the first color filter.

Abstract translation: 提供了一种制造图像传感器的方法。 该方法可以包括制备具有第一至第三像素区域的衬底，在衬底上涂覆第一滤色器层，顺序地形成第一牺牲层和第一保护层以覆盖第一滤色器层，在第一滤色器层上形成第一光致抗蚀剂图案 第一保护层与第一像素区域重叠，执行使用第一光致抗蚀剂图案作为第一牺牲层和第一保护层的蚀刻掩模的第一干蚀刻工艺以形成第一滤色器，第一牺牲图案和 第一保护图案，其顺序地堆叠在第一像素区域上，并且选择性地去除第一牺牲图案以将第一保护图案与第一滤色器分离。